Janhoo 830nm Gain Chip RSOA with Low Ripple and Infrared Band for External Cavity Lasers
Price:
514USD
MOQ:
5
Delivery Time:
7DAYS
Brand:
JANHOO
Product Description
Janhoo 830nm Gain Chip
The Janhoo Gain Chip series serves as a semiconductor optical element designed to function as the optical gain medium in external cavity semiconductor lasers. JHBF provides both low reflectivity and high reflectivity types for the vertical facet side reflectivity. Available in Chip or COC (Chip on Carrier) formats, these products can also be custom packaged into devices to meet specific customer requirements.
Product Features
- Proprietary chips with independent controllability
- Infrared Band operation
- Low ripple products for stable performance
Applications
- External cavity tunable light source (TLS)
- Silicon photonics tunable light source
Technical Specifications
| Parameter | Symbol | Working Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Working current | Iop | 250 | 400 | mA | ||
| Forward Voltage | VF | 2.05 | 2.45 | V | ||
| Centre wavelength | λc | If=250mA, Tc=25℃ | 825 | nm | ||
| ASE Power | PASE | If=250mA, Tc=25℃ | 40 | mW | ||
| ASE Ripple | Ripple | If=250mA, Tc=25℃ | 0.2 | 2 | dB | |
| Emission Angle | θR | 26 | ° | |||
| Vertical Divergence Angle | θt | --- | --- | 32 | ° | |
| Horizontal Divergence Angle | θp | --- | --- | 15 | ° | |
| AR (Anti-Reflection) Reflectivity | RANG | 0.5 | % | |||
| HR (High-Reflection) Reflectivity | RNOR | 98 | % | |||
| Operating Temperature | TC | I=Iop | 25 | 45 | °C | |
| Storage Temperature | Tstg | 85 | °C | |||
| Chip Size | 2500*500*135(±20) | μm |
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Get in Touch
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Company
Tianjin Janhoo Optoelectronics Co., Ltd.
Location
Qifa Building 13th floor, Ecological City Zhongtian Avenue, Binhai New Area, Tianjin, China
Contact Person
Chen