High Purity Alumina Ceramic with Volume Resistivity of 10 4 Ohm*cm for Semiconductor Applications

High Purity Alumina Ceramic with Volume Resistivity of 10 4 Ohm*cm for Semiconductor Applications

This series of semiconductor-specific alumina ceramic components are manufactured using 99.6% ultra-high purity Al₂O₃ material through precision tape casting and high-temperature sintering processes. The products exhibit excellent insulation, corrosion resistance, and dimensional stability, meeting SEMI Standard F47 cleanliness requirements.

Primary Semiconductor Applications

• Wafer fabrication: Etching machine ceramic parts, diffusion boats

• Packaging & testing: Probe card substrates, test sockets

• Equipment components: Robot end effectors

• Vacuum systems: Electrostatic chuck bases

• Optical inspection: Lithography machine ceramic guides

Product Advantages

✓ Ultra-clean: Metal ion content <0.1ppm
✓ Precision dimensions: Tolerance ±0.05mm/100mm
✓ Plasma resistance: Etching rate <0.1μm/h
✓ Low outgassing: TML<0.1% CVCM<0.01%
✓ High reliability: Passes 1000 thermal cycles

Technical Specifications

Semiconductor Manufacturing Process

1. Material preparation:

   • Nano-grade Al₂O₃ powder (D50≤0.5μm)

   • High-purity ball milling (Y₂O₃-MgO sintering aids)

2. Forming process:

   • Tape casting (thickness 0.1-5mm)

   • Isostatic pressing (200MPa)

3. Sintering control:

   • Multi-stage atmosphere sintering (1600°C/H₂)

   • HIP post-treatment (1500°C/150MPa)

4. Precision machining:

   • Laser processing (±5μm)

   • Ultrasonic drilling (aspect ratio 10:1)

5. Cleaning & inspection:

   • Megasonic cleaning (Class 1 cleanroom)

   • SEMI F47 particle testing

Usage Guidelines

⚠️ Storage: Class 100 clean packaging
⚠️ Installation environment: 23±1°C RH45±5%
⚠️ Cleaning: Semiconductor-grade solvents only
⚠️ Handling: Avoid direct contact with functional surfaces

Semiconductor Services

• Cleanliness verification: VDA19 test reports

• Failure analysis: SEM/EDS microanalysis

• Custom development: DFM co-design

FAQ

Q: How to ensure wafer contact surface cleanliness?
A: Triple protection:
① Plasma surface activation
② Vacuum packaging + N₂ storage
③ Pre-installation ionized air cleaning

Q: Performance in fluorine-based plasma?
A: Special treated version:
• Etching rate <0.05μm/h
• AlF₃ passivation layer
• 3x longer lifespan

Q: Maximum processable size?
A: Standard 200×200mm, special process up to 400×400mm.