Diamond-Shaped Hollow Silicon Carbide Ceramic Wafer Carrier with High Thermal Conductivity and 1400℃ High-temperature Resistance for Semiconductor Applications
Price:
CNY
MOQ:
Customized
Delivery Time:
60 workdays
Brand:
Dayoo
Product Description
Diamond-shaped Hollow Silicon Carbide Ceramic Wafer Carrier | Precision Hollow SiC Ceramic Support Plate
Product Introduction
This product is a Diamond-shaped Hollow Silicon Carbide Ceramic Wafer Carrier, manufactured from high-purity silicon carbide (SiC) ceramic raw materials. It features an overall diamond outline with multi-layer annular radial hollow structure in the center. Fabricated via atmospheric pressure high-temperature sintering and precision machining, it boasts high density, lightweight structure and excellent thermal conductivity. The hollow design effectively reduces self-weight and improves gas circulation. It serves as a core load-bearing ceramic component for high-temperature process equipment.
Applications
Widely adopted in semiconductor wafer heat treatment, photovoltaic silicon wafer sintering, optical component annealing, vacuum high-temperature furnaces and other equipment. It works as wafer carrier, airflow baffle and high-temperature fixture, supporting workpieces while ensuring uniform airflow and temperature distribution inside furnaces.
Core Advantages
- Outstanding High-temperature Resistance: Continuous working temperature up to 1400℃, stable dimension under high temperature.
- Balanced Thermal Conductivity & Great Thermal Stability: High thermal conductivity and superior thermal shock resistance, resistant to cracking under repeated heating and cooling cycles.
- High Purity & Contamination-free: Low impurity precipitation, preventing contamination on wafers and precision components.
- Lightweight Hollow Structure: Reduces weight and optimizes air circulation for faster heating and cooling.
Specification Parameters
表格
| Item | Parameter |
|---|---|
| Material | Pressureless Sintered Silicon Carbide (SiC) Ceramic |
| Density | ≥3.10g/cm³ |
| Bending Strength | ≥350MPa |
| Continuous Operating Temperature | ≤1400℃ |
| Dimensional Tolerance | ±0.02mm |
| Porosity | ＜0.5% |
Production Process
Raw Material Mixing & Granulation → Irregular Shape Dry Press Forming → High-temperature Sintering → Surface Precision Grinding → CNC Hollow Milling → Surface Polishing → Ultrasonic Cleaning → Full Dimensional Inspection → Vacuum Packaging
Instructions for Use
- Fully bake the carrier before first use to remove adsorbed impurities.
- Handle gently when placing workpieces to avoid impact on edges and corners.
- Control heating & cooling rate to minimize severe thermal shock.
- Regularly clean sediment inside hollow slots to maintain smooth airflow.
After-sales Service
Customization of hollow patterns and overall dimensions based on drawings or samples, prototype trial service available. All products undergo full inspection before delivery with inspection reports provided. After-sales solution for non-artificial quality defects. Professional technical support for high-temperature working condition selection.
FAQ
Q: What are the advantages of SiC carrier compared with alumina ceramic carrier?
A: Silicon carbide performs better in high-temperature resistance, thermal conductivity and thermal shock resistance, which is more suitable for heat treatment processes with sustained high temperature and frequent thermal cycles.
Q: Can hollow pattern and outer dimension be modified?
A: Yes. Outer profile, hollow layout and plate thickness can be adjusted according to workpiece size.
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Dayoo Advanced Ceramic Co.,Ltd
Location
No. 6, Shuangjin Street, Qiubin Industrial City, Qiubin Street, Wucheng District, Jinhua, Zhejiang
Contact Person
Lu