NGTG15N60S1EG IGBT Transistor 600V 15A TO-263 Package by onsemi
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
NGTG15N60S1EG IGBT Transistor Overview
The NGTG15N60S1EG is a high-performance IGBT (Insulated Gate Bipolar Transistor) manufactured by onsemi, designed for demanding power electronics applications requiring robust switching capabilities and thermal stability.
Key Technical Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCES) | 600V |
| Collector Current (IC) | 15A |
| Package Type | TO-263 (D2PAK) |
| Technology | IGBT with Fast Recovery Diode |
Product Features
- High voltage capability with 600V collector-emitter rating
- 15A continuous collector current for power applications
- Low saturation voltage for improved efficiency
- Fast switching characteristics with integrated diode
- TO-263 surface-mount package for easy PCB integration
- Industrial temperature range operation
Applications
- Motor drives and controls
- Power supplies and inverters
- UPS systems and welding equipment
- Industrial automation systems
Pricing & Availability
We offer competitive global pricing on original, factory-new NGTG15N60S1EG IGBT transistors. All components are guaranteed authentic with full manufacturer specifications.
For volume pricing, technical specifications, or custom requirements, please contact us via online chat or submit a quote request for immediate response.
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Company
UDEL Chips Tech Co., Ltd.
Location
19A, Huaqiang North Hangdu Building, Futian District, Shenzhen
Contact Person
Jack