DRAM Dynamic Random Access Memory MT46V32M16P-5B:J Easy Integration
Price:
Negotiated
MOQ:
300pcs
Delivery Time:
Negotiable
Product Description
MT46V32M16P-5B:J is a Dynamic Random Access Memory (DRAM) produced by Micron Technology, and its key parameters are as follows:
Basic Information
- Manufacturer: Micron Technology
- Model: MT46V32M16P-5B:J
- Type: DDR DRAM
Storage Parameters
- Storage Capacity: 512Mb (or 512Mbit), specifically configured as 32M x 16
- Data Bus Width: 16 bit
Performance Parameters
- Clock Frequency: 200 MHz
- Access Time: 700 ps
- Write Cycle Time (Word/Page): 15 ns
Electrical Parameters
- Supply Voltage: Minimum 2.5 V, Maximum 2.7 V
- Maximum Power Supply Current: 85 mA
Physical Parameters
- Package Type: TSOP-66 (Thin Small Outline Package)
- Package Size: 0.400 inches (or 10.16mm wide)
- Length: May vary depending on the package type, but TSOP-66 typically has specific dimensions
- Moisture Sensitivity: Yes
Note: The dimensions and specific characteristics mentioned are general guidelines and may vary slightly based on manufacturing batches or specific product versions. It is recommended to consult the latest official datasheet or contact the manufacturer for the most accurate information when designing or selecting products.
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Company
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Location
Room 2204-2206, Building A, Phase II, Excellence City, Meilin Road, Futian District, Shenzhen
Contact Person
Coral
