SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
                                                                                                           
Verified Supplier
14 Years
Since 2012
Menu

DRAM Dynamic Random Access Memory MT46V32M16P-5B:J Easy Integration

Price Negotiable
Price: Negotiated
MOQ: 300pcs
Delivery Time: Negotiable
Product Description

MT46V32M16P-5B:J is a Dynamic Random Access Memory (DRAM) produced by Micron Technology, and its key parameters are as follows:

Basic Information

  • Manufacturer: Micron Technology
  • Model: MT46V32M16P-5B:J
  • Type: DDR DRAM

Storage Parameters

  • Storage Capacity: 512Mb (or 512Mbit), specifically configured as 32M x 16
  • Data Bus Width: 16 bit

Performance Parameters

  • Clock Frequency: 200 MHz
  • Access Time: 700 ps
  • Write Cycle Time (Word/Page): 15 ns

Electrical Parameters

  • Supply Voltage: Minimum 2.5 V, Maximum 2.7 V
  • Maximum Power Supply Current: 85 mA

Physical Parameters

  • Package Type: TSOP-66 (Thin Small Outline Package)
  • Package Size: 0.400 inches (or 10.16mm wide)
  • Length: May vary depending on the package type, but TSOP-66 typically has specific dimensions
  • Moisture Sensitivity: Yes

Note: The dimensions and specific characteristics mentioned are general guidelines and may vary slightly based on manufacturing batches or specific product versions. It is recommended to consult the latest official datasheet or contact the manufacturer for the most accurate information when designing or selecting products.

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
Location Room 2204-2206, Building A, Phase II, Excellence City, Meilin Road, Futian District, Shenzhen
Contact Person Coral

Request A Quote

Please check your email address.
Your message must be at least 20 characters.