DMN2050L-7 N-Channel MOSFET 20V 5.9A 29mΩ SOT-23-3 Surface Mount Transistor
Price:
USD 0.01-20/piece
MOQ:
10
Delivery Time:
5-8 work days
Brand:
Diodes Incorporated
Product Description
Product Overview
The DMN2050L-7 is a high-performance N-Channel MOSFET from Diodes Incorporated, designed for efficient power management in compact SMD applications. With 20V drain-source voltage and 5.9A continuous current rating, this component delivers reliable performance in space-constrained designs.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Id) | 5.9 A |
| Drain-Source On Resistance (Rds On) | 29 mΩ |
| Power Dissipation (Pd) | 1.4 W |
| Gate-Source Threshold Voltage (Vgs th) | 450 mV |
| Operating Temperature Range | -55°C to +150°C |
Technical Features
- N-Channel Enhancement Mode MOSFET with single channel configuration
- SOT-23-3 surface mount package for space-efficient PCB design
- Low gate charge of 6.7 nC for fast switching applications
- Compact dimensions: 2.9mm length × 1.3mm width × 1mm height
- Lightweight construction at only 8mg unit weight
- Available in reel packaging for automated assembly processes
Applications & Benefits
This MOSFET is ideal for power switching circuits, DC-DC converters, motor control systems, and battery management applications. The combination of low on-resistance and high current capability ensures minimal power loss and improved system efficiency.
Documentation
Download Technical Datasheet (PDF)
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Company
Shenzhen Hefengxin Technology Co., Ltd.
Location
9D, Floor 9, Building A, Modern Window, Huaqiang North Street, Futian District, Shenzhen
Contact Person
YangJiaHe