NTJS4151PT1G P-Channel MOSFET 20V 3.3A 205mΩ SC-88-6 SMD Power Transistor

Price Negotiable

Price: USD 0.01-20/piece

MOQ: 1

Delivery Time: 5-8 work days

Brand: onsemi

Product Description

Product Overview

The NTJS4151PT1G is a high-performance P-Channel MOSFET from onsemi, designed for efficient power management in compact SMD applications. This enhancement-mode transistor delivers reliable switching performance with low on-resistance and fast switching times.

Key Specifications

Parameter	Value
Drain-Source Voltage (Vds)	20V
Continuous Drain Current (Id)	3.3A
Drain-Source On-Resistance (Rds On)	205 mΩ
Gate-Source Threshold Voltage (Vgs th)	1.2V
Power Dissipation (Pd)	1W
Operating Temperature Range	-55°C to +150°C

Performance Features

Fast switching performance with 1.7ns rise time and 4.2ns descending time
Low gate charge of 10nC for efficient operation
High forward transconductance of 12S minimum
Compact SC-88-6 package measuring 2mm × 1.25mm × 0.9mm
Single P-Channel configuration for simplified circuit design

Package & Mounting

Available in reel packaging with cut tape options, this MOSFET is optimized for automated SMD assembly processes. The compact dimensions and lightweight design (6.200mg) make it ideal for space-constrained applications.

Technical Documentation

Download Datasheet (PDF)