Carton Silicon Carbide Schottky Diode 20A/1200V SIC SC20120PT With TO-247AB Package
Price:
Negotiable
MOQ:
3,000 Pieces
Delivery Time:
Peak Season Lead Time: one month Off Season Lead Time: within 15 workdays
Product Description
SILICON CARBIDE SCHOTTKY DIODE
Electronics Component
Part Number: SC20120PT
Major Parameter:
| Type | VRRM | IF | IR(25ºC) | IR(175ºC) | VF(25ºC) | VF(175ºC) | Tj | Outline |
| V | A | μA | μA | V | V | ºC | ||
| SC20120PT | 1200 | 2×10 | 5 | 50 | 1.8 | 2.5 | 175 | TO-247AB |
| SC30120PT | 1200 | 2×15 | 5 | 50 | 1.8 | 2.5 | 175 | |
| SC40120PT | 1200 | 2×20 | 5 | 50 | 1.8 | 2.5 | 175 |
Brand: JF logo
Package: TO-247AB
Manufacturer: Jinan Jingheng Electronics Co., Ltd.
Description:
SIC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over voltage conditions.
Features:
· Max Junction Temperature 175°C
· High Surge Current Capacity
· Positive Temperature Coefficient
· Ease of Paralleling
· No Reverse Recovery
· No Forward Recovery
· High Surge Current Capacity
· Positive Temperature Coefficient
· Ease of Paralleling
· No Reverse Recovery
· No Forward Recovery
Application:
· General Purpose
· SMPS, Solar inverter, UPS
· Power Switching Circuits
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Company
Jinan Jingheng Electronics Co., Ltd.
Location
No. 51 Heping Rd, Lixia District, Jinan, Shandong, China 250000
Contact Person
Wang