28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip
Price:
5.9USD each
MOQ:
10pcs
Delivery Time:
1-3 days
Brand:
INNOTION
Product Description
Factory Supply 100% New PA 28V DC-8.5GHz 12W GaN RF Amplifier Transistor
Innotion’s YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 8500MHz. The transistor is supplied in a plastic DFN-6L 4mm*4.5mm package.
Product Specifications
| Signal Bandwidth | DC-8.5GHz |
|---|---|
| Output Power | 12W |
| Voltage | 28V |
| Package | DFN-6L 4mm*4.5mm package |
Company Information
Located in Suzhou Industrial Park and founded in 2010, we are the only official shop for our products. We sell our own manufactured products at competitive prices, including WiFi amplifiers, VCOs, sweep signal sources, wireless card groups, and other product lines.
Our philosophy is that professional people do professional things. We have mastered core technologies in our product field and hold numerous independent intellectual property rights.
Our products are sold throughout domestic markets and are popular with international customers in countries including Russia, the United States, South Korea, Vietnam, and Sweden.
Our Services
We stand by our commitment to ensure first-class customer service and support for all our products.
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Location
Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province
Contact Person
Zhou