Signal Power Amplifier

RFint 100% NEW 8dBm 2.5-7.2GHz RF Wireless Wifi Signal Power Amplifier with Buffer Product Description Operating Frequency 2.5GHz to 7.2GHz Pout ≥8 dBm Harmonics 2nd ≤-24dBc;Harmonics 3rd:≤-25dBc Phase Noise ≤ -75 dBc/Hz a 10kHz,-105 dBc/Hz a 100kHz Supply Voltage 2.8V~7.2V Device Current 12mA a 2.8V~36mA a 7.2V En/TC Enabling device , stabilizing current and thermalcompensation Packing & Delivery To better ensure the safety of your goods, professional, environmentally

ESD Protection and High Frequency Range 8dBm 2.5-7.2GHz Power Amplifier for Electronic Components IC Chip Product Description Operating Frequency 2.5GHz to 7.2GHz Pout ≥8 dBm Harmonics 2nd ≤-24dBc;Harmonics 3rd:≤-25dBc Phase Noise ≤ -75 dBc/Hz a 10kHz,-105 dBc/Hz a 100kHz Supply Voltage 2.8V~7.2V Device Current 12mA a 2.8V~36mA a 7.2V En/TC Enabling device , stabilizing current and thermalcompensation Packing & Delivery To better ensure the safety of your goods, professional,

SZHUASHI 100% New 24V Power Amplifier PA Module YPM5820S 5.7 to 5.9GHz Signal Booster 20W 43dBm Power flatness 1dB Product Description 5700-5900MHz-5900MHz 20W Power Amplifier Application Area: Area5700-5800MHz WIFI Signal Booster 5700-5800MHz WIFI Signal Shield Product Specifications Frequency:5.7-5.9GHz Output power:43dBm (20W) Power flatness:

RFint 100% NEW 8dBm 2.5-7.2GHz RF Wireless Wifi Signal Power Amplifier with Buffer Product Description Operating Frequency 2.5GHz to 7.2GHz Pout ≥8 dBm Harmonics 2nd ≤-24dBc;Harmonics 3rd:≤-25dBc Phase Noise ≤-75 dBc/Hz a 10kHz,-105 dBc/Hz a 100kHz Supply Voltage 2.8V~7.2V Device Current 12mA a 2.8V~36mA a 7.2V En/TC Enabling device , stabilizing current and thermal compensation Packing & Delivery To better ensure the safety of your goods, professional, environmentally

High Efficiency YPM20620880M 80W 28V 1.5G with GaN HEMT RF Signal Amplifier for 2.0-6.2GHz Frequency Range Product Description YPM20620880M s a 80-watt, internally 50ohm matched GaN HEMT, designed specifically with high efficiency, high stability and wide bandwidth capabilities, which makes the YPM20620880M ideal for 2000MHz~6200MHz, CW amplifier applications. It is recommended to use this device under pulse condition and CW mode. Negative Gate Voltage and Bias Sequencing

50W 28V Working Voltage 40dB Power Gain 300-450MHz 47dBm Signal Amplifier Module YPM0450B for High Power Applications Product Description YPM0450B is a wireless signal amplifier module dedicated to 300-450MHz signal. This module has the advantages of high average output power, good in band flatness, small upper and lower sideband offset and so on. Frequency bandwidth:300-450MHz Power Gain:40dB Output power:47dBm Working voltage:28V Power flatness:

SZHUASHI 80W 28 V 0.7-6.2GHz Signal Power Amplifier For Wired LAN Network And Typical VDS for 700MHz-6200MHz Product Description YPM07620880M is a 80-watt, internally 50ohm matched GaN HEMT, designed specifically with high efficiency, high stability and wide bandwidth capabilities, which makes the YPM07620880M ideal for 700MHz~6200MHz, CW amplifier applications. Features Suitable for linear and saturation applications Pout=80W, CW Typical VDS:28 V Freq Range:0.7-6.2GHz

Standard Features 2.4GHz 40W PA Three Stage Power Amplifier for Wireless RF Modules Signal Booster for 1.8-3.8G Product Description Features 1.8GHz-3.8GHz Frequency Range 29dB Gain(Typ)@3.5GHz 120mA Quiescent Current@ VCC=5V 5.0V Power Supply Integrated Output Power Detector ESD protection all ports above 1000V HBM, forward and reverse voltage Packing & Delivery To better ensure the safety of your goods, professional, environmentally friendly, convenient and efficient

SZHUAHSI YP241646 Standard Features 2.4GHz 40W PA Power Amplifier for Wireless RF Modules Signal Booster Product Description The YP241646 is a 40-watt, input-matched LDMOS FETs, designed for 2.5GHz BD communication system applications. It can be used in Class AB/B and Class C for all typical modulation formats. The YP241646 is assembled in an Eared Flanged ceramic package; 2 leads. It is internally integrated with ESD protection circuitry on all ports. Features Frequency

SZHUAHSI 45dBm Output Power 1.6GHz 30W PA Wireless Signal Amplifier for 1560-1620MHz Product Description YPM1630B is a wireless signal shielding module dedicated to 1560-1620MHz signal. This module has the advantages of high average output power, and good in band flatness. Features Frequency Range 1560-1620MHz Operation Voltage 28V Output power 45dBm Power flatness

100-2000MHz 10W Amplifier 28V Wireless Signal Amplifier YPM012035010B This 100-2000MHz 10W wireless signal amplifier is a high-performance module dedicated to 100-2000MHz signal applications. The module features high average output power and excellent in-band flatness. Product Specifications Parameter Specification Frequency 100-2000MHz Output Power 10W Power Flatness

High Electron Mobility Gallium Nitride 28V 15W RF Power Transistor YP601241T Product Overview Innotion's YP601241T is a 15-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 6000MHz. The transistor is supplied in a plastic SOT-89 package. Technical Specifications Package SOT-89 Output Power 15W Operating Frequency DC ~6GHz Voltage 28V Key

80W 0.6-6.0GHz 28V RF Wireless Signal Power Amplifier Module for 600-6000MHz YPM06605080B2 is a 80W broadband power amplifier module dedicated to 600-6000MHz signals, supporting both pulse and continuous wave signals. The module operates with a 28-30V power supply and features a compact overall size of 220mm × 110mm × 20mm. Technical Specifications Frequency Range 600-6000MHz Average Output Power 80W Operating Voltage 28-30V Gain Flatness ±1.5 dB Storage Temperature -55°C to

High Efficiency Electron Mobility 12W 28V DC-8.5GHz GaN RF Power Amplifier Transistor Integrated Chip Innotion's YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 8500MHz. The transistor is supplied in a plastic DFN-6L 4mm*4.5mm package. Product Specifications Signal Bandwidth DC-8.5GHz Output Power 12W Voltage 28V Package

50W 300-2200MHz 28V RF Wireless Signal Power Amplifier Module YPM03224550B2 The YPM03224550B2 is a 50W power amplifier module designed for 300-2200MHz signals, supporting both pulse and continuous wave (CW) signals. The module operates with a 28V power supply and features a compact design measuring 130.5mm × 90mm × 24.5mm (excluding connectors). Technical Specifications Frequency Range 300-2200MHz Average Output Power 50W Operating Voltage 28V Gain Flatness ±2 dB Storage

SZHUASHI 6W 28V RF Wireless Signal Power Amplifier Module for 200-3600MHz YPM02363438B is a RF power amplifier module dedicated to 200-3600MHz signal. This module has the advantages of high average output power, good in band flatness. Technical Specifications Frequency Range 200-3600MHz Average Output Power 6W Operating Voltage 28V Gain Flatness ±1.5 dB Storage Temperature -40 ~ +150°C Product Images Manufacturer Information Company Background: Located in Suzhou Industrial

60W 6-8GHz 50Ω-match GaN 28V 60W Power Amplifier GaN High Electron Mobility Transistor Product Overview YPM60800860M is a 60-watt, 50 Ω-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities. This makes the YPM60800860M ideal for multiple applications with frequency from 6000MHz to 8000MHz. High efficiency design High gain performance Wide bandwidth capabilities 50 Ω

High-Performance Dual-Band WLAN 2.5W 2.4&5.8GHz Bidirectional Signal Booster for lEEE 802.11 n/ac Wireless LAN Elevate your wireless network coverage and stability with the SZHUAHI Dual-Band WLAN Signal Booster. Engineered for demanding IEEE 802.11 n/ac environments, this amplifier delivers robust signal enhancement for seamless connectivity across larger areas. Key Specifications Place of Origin China Brand SZHUAHI Mounting Type Self-installation (with pre-drilled holes)

1300W 1.6-512MHz LDMOS Power Amplifier for Wide-band Commercial and Industrial Applications Product Overview This 1300W LDMOS Power Amplifier operates from 1.6MHz to 512MHz and can be used in Class AB/B and Class C for all typical modulation formats. It features high power and high ruggedness, making it suitable for Industrial, Scientific and Medical applications, as well as FM radio, VHF TV and Aerospace applications. Key Features High Efficiency and Linear Gain Operation

Power flatness 1dB Wireless Lan 20W 5.8G 43dBm 24V Power Amplifier PA for Signal Booster and Signal Shield for 5700-5900MHz Product Description 5700-5900MHz-5900MHz 20W Power Amplifier Application Area: Area5700-5800MHz WIFI Signal Booster 5700-5800MHz WIFI Signal Shield Product Specifications Frequency:5.7-5.9GHz Output power:43dBm (20W) Power flatness: