64Mb High Speed PSRAM Chip CMOS IS66WVE4M16EBLL 70BLI
| Manufacturer | ISSI |
|---|---|
| Product Category | SRAM |
| Memory Size | 64 Mbit |
| Organization | 4 M x 16 |
| Package/Case | TFBGA-48 |
| Series | IS66WVE4M16EBLL |
| Type | Asynchronous |
| Moisture Sensitive | Yes |
| Operating Temperature | -40°C to +85°C |
| Supply Voltage | 2.7V to 3.6V |
The IS66/67WVE4M16EALL/BLL/CLL integrated memory device contains 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes including Partial Array Refresh mode and Deep Power Down mode to reduce standby current drain.
- Asynchronous and page mode interface
- Dual voltage rails for optional performance
- Page mode read access with 25ns intrapage read
- Low power consumption: <30mA operation, <200µA standby
- Deep power-down mode: <10µA (Typ)
- Temperature controlled refresh and partial array refresh
- Industrial temperature range: -40°C to +85°C
- 48-ball TFBGA package
Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to requirements.
We typically quote within 24 hours after receiving your inquiry (excluding weekends and holidays). For urgent requests, please contact us directly.
Small batches typically ship within 7-15 days, while large batches may require about 30 days depending on order quantity and season.
Factory price with 30% deposit and 70% T/T payment before shipment.
Available by sea, air, or express delivery (EMS, UPS, DHL, TNT, FEDEX). Please confirm with us before ordering.
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