P25Q16SH-SSH-IT 16M-bit Ultra Low Power NOR Flash Memory with 2.3V to 3.6V Supply and 100K Cycling Endurance

• Wide Supply Range from 2.3V to 3.6V for Read, Erase and Program
• Ultra Low Power consumption for Read, Erase and Program
• X1, X2 and X4 Multi I/O, QPI, DTR Support
• High reliability with 100K cycling and 20 Year-retention

• Single 2.3V to 3.60V supply
• Industrial Temperature Range -40C to 85C
• Serial Peripheral Interface (SPI) Compatible: Mode 0 and Mode 3
• Single, Dual, Quad SPI, QPI, DTR- Standard SPI: SCLK,CS#,SI,SO,WP#,HOLD#- Dual SPI: SCLK,CS#,IO0,IO1,WP#, HOLD#- Quad SPI: SCLK,CS#,IO0,IO1,IO2,IO3- QPI: SCLK,CS#,IO0,IO1,IO2,IO3- DTR: Double Transfer Rate Read

• Uniform 256-byte Page Program
• Uniform 256-byte Page Erase
• Uniform 4K-byte Sector Erase
• Uniform 32K/64K-byte Block Erase
• Full Chip Erase

• Hardware Controlled Locking of Protected Sectors by WP Pin
• One Time Programmable (OTP) Security Register- 3*1024-Byte Security Registers With OTP Lock
• 128 bit unique ID for each device

• 1.5ms Single/Dual/Quad Page(s) program time
• 16ms Page erase time
• 16ms 4K-byte sector erase time
• 16ms 32K/64K-byte block erase time

• 0.5uA Deep Power Down current
• 10.0uA Standby current
• 2.5mA Active Read current at 33MHz
• 3.0mA Active Program or Erase current

• 100,000 Program / Erase Cycles
• 20-year Data Retention

• 8-pin SOP (150mil/208mil)
• 8-land USON (3x2x0.55mm, 3x4x0.55mm)
• 8-land WSON (6x5mm)
• 8-pin TSSOP
• KGD for SiP

The P25Q16SH is a serial interface Flash memory device designed for use in a wide variety of high-volumeconsumer based applications in which program code is shadowed from Flash memory into embedded orexternal RAM for execution. The flexible erase architecture of the device, with its page erase granularity it isideal for data storage as well, eliminating the need for additional data storage devices.

The erase block sizes of the device have been optimized to meet the needs of today's code and data storageapplications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently.Because certain code modules and data storage segments must reside by themselves in their own eraseregions, the wasted and unused memory space that occurs with large sectored and large block erase Flashmemory devices can be greatly reduced. This increased memory space efficiency allows additional coderoutines and data storage segments to be added while still maintaining the same overall device density.The device also contains an additional 3*1024-byte security registers with OTP lock (One-TimeProgrammable), can be used for purposes such as unique device serialization, system-level Electronic SerialNumber (ESN) storage, locked key storage, etc.

Specifically designed for use in many different systems, the device supports read, program, and eraseoperations with a wide supply voltage range of 2.3V to 3.6V. No separate voltage is required for programmingand erasing

Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.