256Mx8, 128Mx16 2Gb DDR3 SDRAM

• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
• High speed data transfer rates with systemfrequency up to 1066 MHz
• 8 internal banks for concurrent operation
• 8n-Bit pre-fetch architecture
• Programmable CAS Latency
• Programmable Additive Latency: 0, CL-1,CL-2
• Programmable CAS WRITE latency (CWL) basedon tCK
• Programmable Burst Length: 4 and 8
• Programmable Burst Sequence: Sequential orInterleave
• BL switch on the fly
• Auto Self Refresh(ASR)
• Self Refresh Temperature(SRT)
• Refresh Interval:
  • 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
  • 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
• Partial Array Self Refresh
• Asynchronous RESET pin
• TDQS (Termination Data Strobe) supported (x8only)
• OCD (Off-Chip Driver Impedance Adjustment)
• Dynamic ODT (On-Die Termination)
• Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
• Write Leveling
• Up to 200 MHz in DLL off mode
• Operating temperature:
  • Commercial (TC = 0°C to +95°C)
  • Industrial (TC = -40°C to +95°C)
  • Automotive, A1 (TC = -40°C to +95°C)
  • Automotive, A2 (TC = -40°C to +105°C)

• Configuration:
  • 256Mx8
  • 128Mx16
• Package:
  • 96-ball BGA (9mm x 13mm) for x16
  • 78-ball BGA (8mm x 10.5mm) for x8