BTN8982TA Motor Controller Half Bridge Driver with 9 A Output Current AEC-Q100 Qualified for 40V Operation
- Path resistance of max. 20.4 mΩ @ 150 °C (typ. 10.0 mΩ @ 25 °C)
- High Side: max. 10.5 mΩ @ 150 °C (typ. 5.3 mΩ @ 25 °C)
- Low Side: max. 9.9 mΩ @ 150 °C (typ. 4.7 mΩ @ 25 °C)
- Enhanced switching speed for reduced switching losses
- Capable for high PWM frequency combined with active freewheeling
- Low quiescent current of typ. 7 μA @ 25 °C
- Switched mode current limitation for reduced power dissipation in overcurrent
- Current limitation level of 55 A min.
- Status flag diagnosis with current sense capability
- Overtemperature shut down with latch behaviour
- Undervoltage shut down
- Driver circuit with logic level inputs
- Adjustable slew rates for optimized EMI
- Operation up to 40V
- Green Product (RoHS compliant)
- AEC Qualified
The BTN8982TA is an integrated high current half bridge for motor drive applications. It is part of the NovalithIC™family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, undervoltage, overcurrent and short circuit. The BTN8982TA provides a cost optimized solution for protected high current PWM motor drives with very low board space consumption.
Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
| Pos. | Parameter | Symbol | Min. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Voltages | ||||||
| 4.1.1 | Supply Voltage | VS | -0.3 | 40 | V | – |
| 4.1.2 | Drain-Source Voltage High Side | VDS(HS) | -40 | – | V | Tj ≥ 25°C |
| -38 | – | V | Tj < 25°C | |||
| 4.1.3 | Drain-Source Voltage Low Side | VDS(LS) | – | 40 | V | Tj ≥ 25°C |
| – | 38 | V | Tj < 25°C | |||
| 4.1.4 | Logic Input Voltage | VINVINH | -0.3 | 5.3 | V | – |
| 4.1.5 | Voltage at SR Pin | VSR | -0.3 | 1.0 | V | – |
| 4.1.6 | Voltage between VS and IS Pin | VS -VIS | -0.3 | 40 | V | – |
| 4.1.7 | Voltage at IS Pin | VIS | -20 | 40 | V | – |
| Currents | ||||||
| 4.1.8 | HS/LS Continuous Drain Current2) | ID(HS)ID(LS) | -50 | 50 | A | TC < 85°C switch active |
| -44 | 44 | A | TC < 125°C switch active | |||
| 4.1.9 | HS/LS Pulsed Drain Current2) | ID(HS)ID(LS) | -117 | 117 | A | tpulse = 10ms single pulse TC < 85°C |
| -104 | 104 | A | TC < 125°C | |||
| 4.1.10 | HS/LS PWM Current2) | ID(HS)ID(LS) | -68 | 68 | A | f = 1kHz, DC = 50% TC < 85°C |
| -60 | 60 | A | TC < 125°C | |||
| -70 | 70 | A | f = 20kHz, DC = 50% TC < 85°C | |||
| -62 | 62 | A | TC < 125°C | |||
| Temperatures | ||||||
| 4.1.11 | Junction Temperature | Tj | -40 | 150 | °C | – |
| 4.1.12 | Storage Temperature | Tstg | -55 | 150 | °C | – |
| ESD Susceptibility | ||||||
| 4.1.13 | ESD Resistivity HBM3) | IN, INH, SR, ISOUT, GND, VSVESD | -2 | 6 | kV | HBM |
1) Not subject to production test, specified by design
2) Maximum reachable current may be smaller depending on current limitation level
3) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS-001 (1,5kΩ, 100pF)

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