High-performance 80V N-channel Power MOSFET with 8.2mΩ low on-resistance and 120A current capacity for efficient power management
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Product Description
PSMN8R2-80YS High-Performance 80V N-Channel Power MOSFET
The PSMN8R2-80YS is a high-performance N-channel power MOSFET with 8.2mΩ low on-resistance and 120A current capacity, engineered for efficient power management and switching applications.
Core Function
This MOSFET features a low on-resistance (RDS(on) = 8.2 mΩ typical at VGS = 10 V) and a high drain-source voltage rating (VDS = 80 V), enabling low power dissipation and reliable operation in medium-voltage power conversion scenarios. With a maximum continuous drain current (ID) of 120 A, the device delivers robust current-handling capability while maintaining thermal stability through its optimized package design. Advanced MOSFET technology ensures fast switching speeds, low gate charge (Qg), and excellent ruggedness for demanding power switching applications requiring precision, efficiency, and long-term reliability.
Key Applications
- Switch-Mode Power Supplies (SMPS): Ideal for AC-DC and DC-DC converters in industrial power supplies, server power units, and telecom infrastructure where high efficiency and compact design are critical.
- Motor Control: Suitable for driving brushless DC (BLDC) motors, stepper motors, and industrial motors in robotics, automotive electronics, and HVAC systems.
- Battery Management Systems (BMS): Used in battery packs for electric vehicles (EVs), energy storage systems (ESS), and portable power devices.
- Power Inverters: Applied in solar inverters, UPS systems, and inverter welders for reliable high-voltage switching.
- Industrial Automation: Utilized in PLCs, motor drives, and PDUs for industrial machinery.
- Automotive Electronics: Compatible with EV traction inverters, onboard chargers (OBCs), and DC-DC converters.
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Company
Berton Electronics Limited
Location
Room 905 Dong Le Building , NanJi Road , Luohu District, Shenzhen,China.
Contact Person
Jessica