IRF7307TRPBF P-channel power MOSFET with -40V rating, 44mΩ ultra-low on-resistance, and -6.8A current capacity for high-efficiency power switching
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Product Description
IRF7307TRPBF -40V P-Channel Power MOSFET
Product Overview
The IRF7307TRPBF is a high-performance P-channel power MOSFET featuring 44mΩ ultra-low on-resistance and -6.8A current capacity. Designed for low-voltage, high-efficiency power switching applications, this MOSFET delivers robust performance in demanding environments.
Core Features
- Ultra-low on-resistance: 44 mΩ typical at VGS = -10 V
- High voltage rating: Maximum drain-source voltage (VDS) of -40 V
- Powerful current handling: Continuous drain current (ID) of -6.8 A
- Compact design: TO-252 (DPAK) package for space-efficient PCB integration
- Advanced technology: Trench MOSFET design for superior thermal stability
- Robust protection: ESD protection (HBM 2 kV) for reliable operation
- Fast switching: Low input capacitance and quick response times
Key Applications
- Battery-Powered Devices: Portable electronics, handheld tools, and battery packs
- Load Switching: Power distribution in consumer electronics and IoT devices
- DC-DC Converters: Voltage regulation for MCUs and embedded systems
- Automotive Electronics: Interior lighting, infotainment modules, and APUs
- Power Management Units: Computing devices and industrial automation equipment
- Consumer Electronics: Displays, set-top boxes, and home appliances
- Industrial Automation: Sensors, PLCs, and low-voltage motor drives
- Wearable Technology: Smartwatches, fitness trackers, and health monitors
Technical Specifications
| Drain-Source Voltage (VDS) | -40 V |
| Continuous Drain Current (ID) | -6.8 A |
| On-Resistance (RDS(on)) | 44 mΩ (typical at VGS = -10 V) |
| Gate-Source Voltage (VGS) | ±20 V |
| Operating Temperature Range | -55°C to +175°C |
| Package Type | TO-252 (DPAK) |
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Company
Berton Electronics Limited
Location
Room 905 Dong Le Building , NanJi Road , Luohu District, Shenzhen,China.
Contact Person
Jessica