IRF640NPBF 200V 18A N-Channel Power MOSFET with 0.18Ω Low On-Resistance for High-Performance Switching
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Product Description
IRF640NPBF - 200V N-Channel Power MOSFET
High-performance 200V N-channel power MOSFET with 0.18Ω low on-resistance and 18A continuous current capacity.
Core Function
The IRF640NPBF is a high-performance N-channel power MOSFET designed for medium-voltage, high-current power switching and energy conversion applications. Key features include:
- Low on-resistance: RDS(on) = 0.18 Ω typical at VGS = 10 V
- High voltage rating: VDS = 200 V
- Robust current handling: 18A continuous drain current (ID), 72A pulsed drain current (IDM)
- Efficient packaging: TO-220AB through-hole package for optimal heat dissipation
- Wide temperature range: -55°C to 175°C junction temperature operation
- Advanced technology: Planar MOSFET design with fast switching speeds and low gate charge
- Reliable performance: Built-in ESD protection and stable operation in harsh environments
Key Applications
- Switch-Mode Power Supplies (SMPS): AC-DC and DC-DC converters for industrial power supplies, server units, and high-voltage adapters
- Power Inverters: Solar inverters, UPS systems, and inverter welders
- Motor Control: DC motors, BLDC motors, and industrial pumps/fans in robotics and automation
- Audio Amplifiers: High-power audio systems and professional audio equipment
- Battery Charging Systems: EV chargers, forklifts, and energy storage systems
- Industrial Automation: PLCs, motor drives, and power distribution units
- Lighting Systems: High-power LED drivers and HID ballasts
- Automotive Electronics: Power steering, HVAC compressors, and aftermarket systems
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Company
Berton Electronics Limited
Location
Room 905 Dong Le Building , NanJi Road , Luohu District, Shenzhen,China.
Contact Person
Jessica