2SC2712S-YLF Bipolar Transistors Integrated Circuit IC Chip BJT SM Sig NPN Trans VCEO 50V 150mA
Price:
Negotiable
MOQ:
50
Delivery Time:
1-2days
Brand:
New & Original
Product Description
2SC2712S-Y,LF / Bipolar Transistors - BJT SM Sig NPN Trans VCEO -50V IC -150mA
Key Specifications
Category: Bipolar Transistors - BJT
Technology: Si
Polarity: NPN
Max Collector Current: 150 mA
Collector-Emitter Voltage: 50 V
Operating Temperature: -55°C to +125°C
Detailed Specifications
| Parameter | Value |
|---|---|
| Mounting Style | SMD/SMT |
| Package/Case | SC-59-3 |
| Configuration | Single |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector-Emitter Saturation Voltage | 250 mV |
| Power Dissipation (Pd) | 150 mW |
| Gain Bandwidth Product (fT) | 80 MHz |
| DC Collector/Base Gain (hfe Min) | 70 |
| DC Current Gain (hFE Max) | 700 |
Physical Dimensions
| Dimension | Value |
|---|---|
| Height | 1.1 mm |
| Length | 2.9 mm |
| Width | 1.5 mm |
| Unit Weight | 0.000282 oz |
Additional Information
Brand: Toshiba
Series: 2SC2712
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Factory Pack Quantity: 3000
Packaging Options: Reel Cut Tape MouseReel
RoHS Status: Details available
Shipping Restrictions: Not currently available in your region
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