HK NeoChip Technology Limited
                                                                                                           
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China MDP1932 BVDSS Gate Threshold Voltage MagnaChip Gate Leakage Current for sale

MDP1932 BVDSS Gate Threshold Voltage MagnaChip Gate Leakage Current

Price Negotiable
Price: 0.69u
MOQ: Negotiable
Delivery Time: Negotiable
Brand: MDP1932
Product Description

Drain-Source Breakdown Voltage  BVDSS  ID = 250μA, VGS = 0V  ID = 250μA, VGS = 0V 
Gate Threshold Voltage  VGS(th)  VDS = VGS, ID = 250μA 
Drain Cut-Off Current  VGS(th)  VDS = 72V, VGS = 0V 
Gate Leakage Current  IGSS  VGS = ±20V, VDS = 0V 
Drain-Source ON Resistance  RDS(ON)  VGS = 10V, ID = 50A 
Forward Transconductance  gfs  DS = 10V, ID = 50A 


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Company HK NeoChip Technology Limited
Location Futian District Huaqiang Subdistrict, Huaqiang Garden, Building A, Room 31C
Contact Person wei lin

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