K4A8G165WG-BCWE DDR4-3200 8Gb (512MX16) 0.620ns Samsung Semiconductor, Inc.SDRAM - DDR4 Memory IC 8Gbit Parallel 3200 Mbps 19 ns
Price:
Negotiated
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Attributes
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Category
Integrated Circuits (ICs)
Memory
Memory
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Memory Interface
Parallel
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|
Mfr
Samsung Semiconductor, Inc.
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Clock Frequency
3200 Mbps
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|
Packaging
Tray
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Write Cycle Time - Word, Page
15ns
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|
Part Status
Active
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Access Time
19 ns
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Memory Type
Volatile
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Voltage - Supply
1.2V
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|
Memory Format
DRAM
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Operating Temperature
0°C ~ 95°C
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Technology
SDRAM - DDR4
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Mounting Type
Surface Mount
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Memory Size
8Gbit
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Package / Case
96-FBGA
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Memory Organization
512M x 16
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Company
HK NeoChip Technology Limited
Location
Futian District Huaqiang Subdistrict, Huaqiang Garden, Building A, Room 31C
Contact Person
wei lin