K4A4G165WG-BCWE Samsung Semiconductor, Inc. DDR4-3200 4Gb (256MX16) 0.620ns SDRAM - DDR4 Memory IC 4Gbit Parallel 3200 Mbps 19 ns
Price:
Negotiated
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Attributes
Filter Similar Products
Show Empty Attributes
|
Category
Integrated Circuits (ICs)
Memory
Memory
|
Memory Interface
Parallel
|
|
Mfr
Samsung Semiconductor, Inc.
|
Clock Frequency
3200 Mbps
|
|
Packaging
Tray
|
Write Cycle Time - Word, Page
15ns
|
|
Part Status
Active
|
Access Time
19 ns
|
|
Memory Type
Volatile
|
Voltage - Supply
1.2V
|
|
Memory Format
DRAM
|
Operating Temperature
0°C ~ 95°C
|
|
Technology
SDRAM - DDR4
|
Mounting Type
Surface Mount
|
|
Memory Size
4Gbit
|
Package / Case
96-FBGA
|
|
Memory Organization
256M x 16
|
|
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
HK NeoChip Technology Limited
Location
Futian District Huaqiang Subdistrict, Huaqiang Garden, Building A, Room 31C
Contact Person
wei lin