AlN / Al2O3 Ceramic Semiconductor Package For Power Device RF Module Encapsulation
Price:
Customization
MOQ:
100
Delivery Time:
20-30 working days
Brand:
XQCERA
Product Description
Ceramic Semiconductor Package | High Thermal Conductivity AlN/Al2O3 for Power Device (IGBT, MOSFET) & RF Module Encapsulation
High-performance ceramic semiconductor packages featuring exceptional thermal conductivity using AlN (Aluminum Nitride) and Al₂O₃ (Aluminum Oxide) materials. Engineered for superior heat dissipation and reliable performance in demanding electronic applications.
Key Features
- Exceptional thermal conductivity for efficient heat management
- Available in AlN and Al₂O₃ ceramic formulations
- Superior electrical insulation properties
- Excellent mechanical strength and durability
- High temperature stability and reliability
- Precision manufacturing for consistent performance
Primary Applications
- Power Device Encapsulation (IGBT, MOSFET)
- RF Module Packaging and Protection
- High-power semiconductor devices
- Advanced electronic systems requiring thermal management
- Industrial power electronics
- Telecommunications equipment
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Company
Hunan Xiaoqing Ceramics Co., Ltd.
Location
Huadan Industrial Park, No. 628, Xianglu Avenue, Ludou District, Zhuzhou City, Hunan Province,China
Contact Person
Katherine Huang