Compact emi filter onsemi NUF6401MNT1G with pi style configuration providing wireless interference suppression
Product Overview
The NUF6401MN and SNUF6401MN are six-channel (C-R-C) Pi-style EMI filter arrays with integrated ESD protection. Featuring typical component values of R = 100 and C = 17 pF, they deliver a cutoff frequency of 110 MHz and stop band attenuation greater than -30 dB from 800 MHz to 3.0 GHz. This performance is ideal for parallel interfaces with data rates up to 74 Mbps in applications requiring minimized wireless interference, effectively suppressing signals from 2G/3G, GPS, Bluetooth, and WLAN. Available in a low-profile 12-lead 1.35 mm x 3.0 mm DFN12 surface mount package, these devices offer an integrated EMI/ESD system solution for cost, reliability, and space savings. The 'S' prefix variant (SNUF6401) is intended for automotive and other applications with unique site and control change requirements, being AEC-Q101 qualified and PPAP capable.
Product Attributes
- Brand: ON Semiconductor
- Package Type: DFN12
- Certifications: AEC-Q101 Qualified (SNUF6401 variant)
- Material: Pb-Free Devices
Technical Specifications
| Model | Description | R Value | C Value | f3dB Cut-Off Frequency | Stop Band Attenuation | ESD Protection | Package | Ordering Information |
|---|---|---|---|---|---|---|---|---|
| NUF6401MN | 6-Channel EMI Filter with Integrated ESD Protection | 100 (Typical) | 17 pF (Typical) | 110 MHz | > -30 dB from 800 MHz to 3.0 GHz | 15 kV (IEC61000-4-2 Contact Discharge) per channel | DFN12 (1.35 mm x 3.0 mm) | NUF6401MNT1G (3000 / Tape & Reel) |
| SNUF6401MN | 6-Channel EMI Filter with Integrated ESD Protection (Automotive) | 100 (Typical) | 17 pF (Typical) | 110 MHz | > -30 dB from 800 MHz to 3.0 GHz | 15 kV (IEC61000-4-2 Contact Discharge) per channel | DFN12 (1.35 mm x 3.0 mm) | SNUF6401MNT1G (3000 / Tape & Reel) |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||||
| Maximum Reverse Working Voltage (VRWM) | 5.0 V | |||||||
| Breakdown Voltage (VBR) (IR = 1.0 mA) | 6.0 - 7.0 V | |||||||
| Leakage Current (IR) (VRWM = 3.0 V) | 100 - 1000 nA | |||||||
| Resistance (RA) (IR = 10 mA) | 85 - 115 (Typ: 100 ) | |||||||
| Diode Capacitance (Cd) (VR = 2.5 V, f = 1.0 MHz) | 17 - 20 pF (Typ: 17 pF) | |||||||
| Line Capacitance (CL) (VR = 2.5 V, f = 1.0 MHz) | 34 - 40 pF | |||||||
| 6 dB Cut-Off Frequency (f6dB) | 175 MHz | |||||||
Applications
- EMI Filtering for LCD and Camera Data Lines
- EMI Filtering and Protection for I/O Ports and Keypads
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