InGaAs Avalanche Photodiode California Eastern Laboratories KPDEA005B-56F-B optimized for optical sensing

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Product Description

Product Overview

The KPDEA005B-T is an InGaAs Avalanche Photodiode designed for high-performance applications. It offers excellent responsivity at 1310nm and 1550nm, with a specified bandwidth and breakdown voltage. This photodiode is suitable for various optical communication and sensing systems where precise light detection is critical.

Product Attributes

  • Brand: KYOSEMI SEMICONDUCTOR
  • Product Line: Kyosemi Opto America Corporation (U.S.A)
  • Model Series: KPDEA005B
  • Status: Preliminary

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Test Conditions
Absolute Maximum Ratings
Forward Current IF - - 5 mA -
Reverse Current IR - - 3 mA -
Operating Ambient Temperature Ta -40 - +85 C -
Storage Temperature Tstg -40 - +85 C -
Characteristics (Ta=25C unless otherwise noted)
Active Diameter D - 50 - m -
Bandwidth B 3.0 - - GHz M=10
Responsivity @1310nm R 0.85 0.95 - A/W M=1
0.95 1.05 - A/W M=1 @1550nm
Breakdown voltage Vbr 38 - 55 V Id=10A,Pin=-dBm
Dark Current ID - - 20 nA 0.9Vbr
Dark Current ID 0.13 0.14 0.15 - -45~+20
0.07 0.11 0.12 - +20~+85
Total Capacitance Cchip - - 0.50 pF f=1MHz
- - 0.80 pF f=1MHz
Temperature coefficient of Vbr * - - - V/ * = Vbr/T

Note: Specifications are subject to change without notice.


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Company Changsha Purple Horn E-Commerce Co., Ltd.
Location 2332 Kaibin Commercial Plaza, No. 419 Shaoshan Middle Road, Shazitang Street, Yuhua District, Changsha City, Hunan Province
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