Phototransistor output surface mount photointerrupter SHARP GP1S092HCPIF compact transmissive type for detection

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

SHARP GP1S092HCPIF Compact Transmissive Photointerrupter

The SHARP GP1S092HCPIF is a compact, surface-mount transmissive photointerrupter featuring a phototransistor output. Designed for non-contact sensing, it integrates opposing emitter and detector within a durable molding. Its unique design includes a D-shaped positioning pin for precise PCB placement and is available in Tape and Reel packaging, making it ideal for automated manufacturing processes. This device is suitable for general-purpose detection of object presence or motion, finding applications in printers and camera lens control.

Product Attributes

  • Brand: SHARP
  • Model: GP1S092HCPIF
  • Type: Compact Transmissive Photointerrupter
  • Output: Phototransistor
  • Mounting Type: Surface Mount (SMT)
  • Packaging: Tape and Reel (T&R)
  • Compliance: RoHS directive compliant
  • Origin: Japan (Date code indicates production year and month)
  • Material (Case): Black polyphernylene sulfide resin (UL94 V-0)
  • Material (Lead frame): 42Alloy
  • Lead frame plating: SnCu plating

Technical Specifications

Parameter Symbol Condition Min. Typ. Max. Unit
Dimensions
Package Dimensions 4.5×2.6×2.9 mm
Gap Width 2 mm
Slit Width (detector side) 0.3 mm
Product mass 0.05 g
Absolute Maximum Ratings
Forward current IF 50 mA
Reverse voltage VR 6 V
Power dissipation P 75 mW
Collector-emitter voltage VCEO 35 V
Emitter-collector voltage VECO 6 V
Collector current IC 20 mA
Collector power dissipation PC 75 mW
Total power dissipation Ptot 100 mW
Operating temperature Topr -25 +85 °C
Storage temperature Tstg -40 +100 °C
Soldering temperature Tsol For 5s or less 260 °C
Electro-optical Characteristics (Ta=25°C)
Forward voltage VF IF=20mA 1.2 1.4 V
Reverse current IR VR=3V 10 μA
Collector dark current ICEO VCE=20V 100 nA
Collector current IC VCE=5V, IF=5mA 100 400 μA
Collector-emitter saturation voltage VCE(sat) IF=10mA, IC=40μA 0.4 V
Rise time tr VCE=5V, IC=100μA, RL=1kΩ 50 150 μs
Fall time tf VCE=5V, IC=100μA, RL=1kΩ 50 150 μs
Internal Components
Photodetector Category: Phototransistor
Material: Silicon (Si)
Maximum Sensitivity wavelength 930 nm
Sensitivity wavelength 700 to 1200 nm
Response time 20 μs
Photo emitter Category: Infrared emitting diode (non-coherent)
Material: Gallium arsenide (GaAs)
Maximum light emitting wavelength 950 nm
I/O Frequency 0.3 MHz

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Changsha Purple Horn E-Commerce Co., Ltd.
Location 2332 Kaibin Commercial Plaza, No. 419 Shaoshan Middle Road, Shazitang Street, Yuhua District, Changsha City, Hunan Province
Contact Person Coral

Request A Quote

Please check your email address.
Your message must be at least 20 characters.