High Diode 2300
Price:
Negotiable
MOQ:
1
Delivery Time:
6-13 working days
Brand:
High Diode
Product Description
Product Overview
Function: N-Channel MOSFET
Usage: Load Switch, DC/DC Converter
Advantages: Trench Technology, Low RDS(ON), Low Gate Charge, ESD Protected
Brand
HIGH DIODE SEMICONDUCTOR
Package Type
SOT-23
Certifications
RoHS Compliant
Technology
Trench Technology Power MOSFET
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
|---|---|---|---|---|---|---|
| Drain - Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V | 1 | A | ||
| Gate - Body Leakage Current | IGSS | VGS = 12V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 0.4 | 0.7 | 1 | V |
| Drain-source On-resistance | RDS(on) | VGS = 4.5V, ID = 3A | 18 | 32 | m | |
| Drain-source On-resistance | RDS(on) | VGS = 2.5V, ID = 2A | 22 | 40 | m | |
| Drain-source On-resistance | RDS(on) | VGS = 1.8V, ID =2A | 28 | 62 | m | |
| Input Capacitance | Ciss | VDS = 10V, f = 1MHz | 336 | pF | ||
| Output Capacitance | Coss | VDS = 10V, f = 1MHz | 78.4 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 10V, f = 1MHz | 70 | pF | ||
| Total Gate Charge | Qg | VDS = 10V, VGS = 4.5V, ID=6A | 6.4 | 8.2 | nC | |
| Gate-source Charge | Qgs | VDS = 10V, VGS = 4.5V, ID=6A | 1.8 | 2.3 | nC | |
| Gate-drain Charge | Qg d | VDS = 10V, VGS = 4.5V, ID=6A | 1.3 | 1.9 | nC | |
| Turn-on Delay Time | td(on) | VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6 | 10.5 | 21 | ns | |
| Turn-on Rise Time | tr | VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6 | 4.5 | 9 | ns | |
| Turn-off Delay Time | td(off) | VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6 | 27.5 | 55 | ns | |
| Turn-off Fall Time | tf | VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6 | 4.3 | 8.6 | ns | |
| Diode Forward Voltage | VSD | VGS = 0V, IS = 1.7A | 1.2 | V |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain - Source Voltage | VDS | 20 | V |
| Gate - Source Voltage | VGS | 12 | V |
| Continuous Drain Current | ID | 4.5 | A |
| Pulsed Drain Current | IDM | 18 | A |
| Power Dissipation | PD | 1.4 | W |
| Thermal Resistance Junction to Ambient | RJA | 89 | /W |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | TSTG | -55~ +150 |
Package Outline Dimensions (SOT-23)
| Symbol | Min (mm) | Max (mm) | Min (in) | Max (in) |
|---|---|---|---|---|
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.150 | 1.500 | 0.045 | 0.059 |
| E1 | 2.250 | 2.650 | 0.089 | 0.104 |
| e | 1.800 | 2.000 | 0.071 | 0.079 |
| e1 | 0.950 TYP | 0.037 TYP | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | ||||
| 0 | 8 | 0 | 8 |
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Company
Shenzhen ECER Network Technology Co., Ltd.
Location
Unit A2603, One Avenue (South Zone), Zhuoyue Meilin Center Plaza, No. 126 Zhongkang Road, Meidu Community, Meilin Subdistrict, Futian District, Shenzhen
Contact Person
Sales