Norceramic New Materials (Beijing) Co., Ltd
                                                                                                           
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High Thermal Conductivity Aluminum Nitride Substrates Grey Aluminum Nitride Parts

Price Negotiable
Price: 2$~20$ Per Piece
MOQ: 1 Piece
Delivery Time: 15-20 Work Days
Brand: TM
Product Description

High Thermal Conductivity Aluminum Nitride ALN Ceramic Substrates

 

 

Aluminum Nitride, formula AlN, is a newer material in the technical ceramics family, and a covalently bonded material with hexagonal crystal structure.AlN has excellent thermal, mechanical and electrical properties, such as high thermal conductivity, low dielectric constant, high electrical resistivity, low density and a thermal expansion coefficient that matches well with that of silicon.

 

Aluminum Nitride (AlN) ceramic parts deliver exceptionally high thermal conductivity and excellent electrical insulation. Widely used across power electronics and semiconductor equipment, AlN acts as a non-toxic replacement for Beryllium Oxide (BeO). It is primarily fabricated into substrates, crucibles, electrostatic chucks, and customized structural components.

 

Made of high‑performance aluminum nitride ceramic, this heat sink features high thermal conductivity and excellent electrical insulation. Its thermal expansion coefficient closely matches silicon chips, reducing thermal‑cycle stress for long‑term reliability. Precision‑machined for custom dimensions, it delivers efficient heat dissipation for power electronics, semiconductors and high‑power LED devices.

 

 

AlN Materials Properties Aluminum Nitride
Purity 95%-99%
Density 3.3g/cm3
Thermal Conductivity ~180W/m*K
Thermal Expansion <4.2x10⁻⁶/°C
Dielectric  Strength >15kv/mm
Dielectric Constant 8.7@1Mhz
Volume Resistivity >1014
Flexural Strength 320Mpa

 

Core Properties & Advantages
Thermal Conductivity:
Ranges between 170 - 260 W/m·K, rapidly drawing heat away from sensitive electronic and high-temperature systems.
CTE Matching:
The Coefficient of Thermal Expansion closely matches silicon wafers, reducing mechanical stress during operations.
Safety:
Unlike Beryllium Oxide, AlN is not a health hazard when machined, making it the industry standard for safe high-performance heat management.
Mechanical Strength:
Retains structural integrity and high dielectric resistance even in corrosive and high-temperature environments.
 
 
Standard Applications
Because of its unique profile, AlN components are heavily relied on in:
● Power Semiconductors: IGBT modules, MOSFET, thyristor power packaging substrates
● High‑power Electronics: LED high‑power lighting, laser devices, power supply heat‑dissipation plates
● New‑Energy Industry: New‑energy vehicle power modules, photovoltaic inverter components
● Communication & RF Devices: High‑frequency communication base station components, microwave electronic assemblies

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Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company Norceramic New Materials (Beijing) Co., Ltd
Location Room A410, No.1 Juhe Sixth Street, Jufuyuan Industrial Park, Tongzhou Economic Development Zone, Tongzhou District, Beijing, P.R.China
Contact Person Jason Jia

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