baocheng 8205
Price:
Negotiable
MOQ:
500
Delivery Time:
12-40 weeks
Brand:
8205
Product Description
Product Overview
The 8205 Power MOSFET is an N-channel device designed for portable and battery-powered equipment. It is supplied in 8 wafer form and features a 20V drain-source voltage and a 5A continuous drain current. This MOSFET is sampling tested at probe, ensuring quality for demanding applications.
Product Attributes
- Die in 8 Wafer Form
- N-channel
Technical Specifications
| Electrical Characteristics | Symbol | Parameter | Conditions | Min | Typ | Max | Units | ||
|---|---|---|---|---|---|---|---|---|---|
| Absolute Maximum Ratings TA=25C unless otherwise noted | BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250uA | 20 | -- | -- | V | ||
| RDS(on) | Drain-Source On-Resistance | VGS =4.5V, ID =4A | 20.5 | -- | 25 | m | |||
| RDS(on) | Drain-Source On-Resistance | VGS =2.5V, ID =3A | 25 | -- | 34 | m | |||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250uA | 0.5 | -- | 1.0 | V | |||
| IDSS | Drain Current (Zero Gate Voltage) | VDS = 20V, VGS = 0V | -- | -- | 1 | uA | |||
| IGSS | Gate Current (Zero Drain Voltage) | VGS = 8V, ID=0 | -- | -- | 100 | nA | |||
| Qg | Total Gate Charge | VDS = 10V, ID = 5A, VGS = 4.5V | -- | 6.2 | 8.2 | nC | |||
| Qgs | Gate-Source Charge | -- | 1.6 | 2.2 | nC | ||||
| Qgd | Gate-Drain Charge | -- | 1.4 | 1.74 | nC | ||||
| td(on) | Turn-on Delay Time | VDD = 10V, ID = 5A | -- | 10.5 | 20.8 | ns | |||
| tr | Turn-on Rise Time | ID = 1A, VGS = 4.5V | -- | 4.6 | 8.8 | ns | |||
| td(off) | Turn-off Delay Time | -- | 27.3 | 54.72 | ns | ||||
| tf | Turn-off Fall Time | -- | 4.2 | 8.32 | ns | ||||
| Ciss | Input Capacitance | VDS = 8V, VGS = 0V, f=1.0MHz | -- | 522.3 | -- | pF | |||
| Coss | Output Capacitance | -- | 98.48 | -- | pF | ||||
| Crss | Reverse Transfer Capacitance | -- | 74.69 | -- | pF | ||||
| Diode Characteristics | IS | Diode Maximum Forward Current | -- | -- | 1.7 | A | |||
| VSD | Diode Forward Voltage | IS = 1.7A, VGS = 0V | -- | -- | 1.2 | V | |||
| Symbol | Parameter | Conditions | TA = 25C | TA = 75C | Units |
|---|---|---|---|---|---|
| PD | Maximum Power Dissipation | 2 | 1.3 | W |
| Symbol | Parameter | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| TJ, Tstg | Operating Junction and Storage Temperature Range | -55 | -- | 150 | |
| RJA | Thermal Resistance Junction to Ambient (PCB Mounted) | -- | 62.5 | -- | /W |
Note: Repetitive Rating: Pulse width limited by maximum junction temperature. Reflow soldering furnace temperature should be controlled below 265C.
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Company
Shenzhen ECER Network Technology Co., Ltd.
Location
Unit A2603, One Avenue (South Zone), Zhuoyue Meilin Center Plaza, No. 126 Zhongkang Road, Meidu Community, Meilin Subdistrict, Futian District, Shenzhen
Contact Person
Sales