High Power LED
InGaN 45mil chip 20W high brightness LED Warm White 3000k - 3500k
high power 20w white led 45mil chip 20W High Power Light LED Warm White(3000k-3500k) Specifications: ●Electric/ Optical Characteristics at TA=25℃ Parameter Symbol Min Typ. Max. Unit Test Condition Luminous Intensity ∮ 2000 2200 2400 Lm IF =1400mA Viewing Angle 2θ1/2 95 100 105 deg IF =1400mA DominantWavelength TC 3000 3500 K IF =1400mA Forward Voltage vF 15 17 18 v IF =1400mA Reverse Current IR 10 uA VR = 5V Package Dimensions: Payment Information 1. T/T (Wire Transfer) 2.
Super Brightness 10w high power blue LED diode 460nm - 470nm 1050mA 120 viewing angle
Super Brightness 460-470nm 1050mA 120viewing angle power led 10w bule led diodes Specification: Electrical / Optical Characteristics at TA=25℃ Electrical / Optical Characteristics at TA=25℃ Parameter Symbol Min Typ. Max. Unit Test Condition Luminous Intensity ∮ 200 250 300 Lm IF =1050mA Viewing Angle 2θ1/2 110 120 130 deg IF =1050mA Wavelength nm 460 462.5 465 NM IF =1050mA Forward Voltage vF 9 10 11 v IF =1050mA Reverse Current IR 10 uA VR = 5V Absolute Maximum Ratings at TA
High Lumens 20v - 22v 1050mA red high power LED module 30w 620nm - 630nm
High Lumens 20-22v 1050mA 620-630nm 30w red high power led diodes Specification: Electrical / Optical Characteristics at TA=25℃ Parameter Symbol Min Typ. Max. Unit Test Condition Luminous Intensity ∮ 1200 1300 1350 Lm IF =1050mA Viewing Angle 2θ1/2 110 120 130 deg IF =1050mA Wavelength nm 620 622.5 625 NM IF =1050mA Forward Voltage vF 20 21 22 v IF =1050mA Reverse Current IR 10 uA VR = 5V Absolute Maximum Ratings at TA=25℃ Parameter Maximum Rating Power Dissipation 30W Peak
1050mA 520nm - 530nm 30W integrated green high power led diodes / LED beads
1050mA 30-34V 520-530nm 30W integrated green high power led diodes Specification: Electrical / Optical Characteristics at TA=25℃ Parameter Symbol Min Typ. Max. Unit Test Condition Luminous Intensity ∮ 2100 2250 2400 Lm IF =1050mA Viewing Angle 2θ1/2 110 120 130 deg IF =1050mA Wavelength nm 520 522.5 525 NM IF =1050mA Forward Voltage vF 30 32 34 v IF =1050mA Reverse Current IR 10 uA VR = 5V Absolute Maximum Ratings at TA=25℃ Parameter Maximum Rating Power Dissipation 30W Peak
4000K - 4500K Pure white 30W high power LED chip , 2700lm - 3000lm white LED moudle
Pure white 4000-4500K 30W high power led chip 2700-3000lm white LED moudle Product Description chip material InGaN/GaAsp chip brand Epistar, Cree, Bridgelux, Epiled, Huga, etc. available power 0.5w, 1w, 3w, 5w, 6w, 8w, 10w, 20w, 30w, 50w, 60w, 70w, 80w, 100w, 150w, 200w, 300w, 500w. viewing angle 60degree, 120degree, 140degree, 175degree color red, blue, green, yellow, orangle, warm/cool/pure white, bi-color, RGB application adervitising signs, circuit board, computer,
Integrated 1050mA blue high power LED diodes 30w with 2years warranty
Integrated 30-34v 1050mA 30w blue high power led diodes with 2years warranty Specification: Electrical / Optical Characteristics at TA=25℃ Parameter Symbol Min Typ. Max. Unit Test Condition Luminous Intensity ∮ 600 750 900 Lm IF =1050mA Viewing Angle 2θ1/2 110 120 130 deg IF =1050mA Wavelength nm 460 462.5 465 NM IF =1050mA Forward Voltage vF 30 32 34 v IF =1050mA Reverse Current IR 10 uA VR = 5V Absolute Maximum Ratings at TA=25℃ Parameter Maximum Rating Power Dissipation
Pure White 9v - 11v 1050mA 6500K 10W white high power led diodes of InGaN / GaAsp Chip
Pure White 9-11v 1050mA 6500K 10W white high power led diodes Specification: Electrical / Optical Characteristics at TA=25℃ Parameter Symbol Min Typ. Max. Unit Test Condition Luminous Intensity ∮ 900 950 1000 Lm IF =1050mA Viewing Angle 2θ1/2 110 120 130 deg IF =1050mA Color temperate TC 5500 6000 6500 K IF =1050mA Forward Voltage vF 9 10 11 v IF =1050mA Reverse Current IR 10 uA VR = 5V Absolute Maximum Ratings at TA=25℃ Parameter Maximum Rating Power Dissipation 10W Peak
High Brightness 1050mA 620nm - 630nm red high power LED diodes 10w 6V - 7volt
High Brightness 6-7v 1050mA 620-630nm 10w red high power led diodes Specification: Electrical / Optical Characteristics at TA=25℃ Parameter Symbol Min Typ. Max. Unit Test Condition Luminous Intensity ∮ 400 420 450 Lm IF =1050mA Viewing Angle 2θ1/2 110 120 130 deg IF =1050mA Wavelength nm 620 622.5 625 NM IF =1050mA Forward Voltage vF 6 7 v IF =1050mA Reverse Current IR 10 uA VR = 5V Absolute Maximum Ratings at TA=25℃ Parameter Maximum Rating Power Dissipation 10W Peak Forward
Two chips in parallel 1400mA 5W white color high power LED diodes
New Products two chips in parallel 1400mA 5W white color high power led diodes Specification: Absolute maximum ratings (Ta=25C) Item Symbol Absolute Maximum Rating Unit Forward Current IF 1400 mA Peak Forward Current IFP 1800 mA ReverseVoltage VR 5 V Power Dissipation PD mw Electrostatic discharge ESD 10000 V Operation Temperature TOPR -25~+120 ℃ Storage Temperature TSTG -40~+80 ℃ Lead Soldering Temperature TSOL 330 ℃ for 5sec Max. Electro-optical characteristics (Ta=25C)
10W red LED beads diode , Epileds / Epistar Chip LED emitter 620m 630nm
10W red led beads diode red led emitter 620m 630nm red led lamps specifications: Power 10w Chips Brand Epileds, Epistar, Bridgelux, cree Q’ty Chip 9pcs round type,10pcs square type Chip size 45MIL CCT warm white:2500-3500K pure whtie:5500-6500K,cool white:7000-1000K Color available white ,red ,green,blue ,yellow ,rgb, bi color Life Span 50,000hours Certificate ROHS, SGS CRI Pure white Ra more than 80 Warm white more than 85 Delivery days 5 work days payment T/T, Western union
700mA 3.4-3.8V 3W 380nm UV high power led diodes for led nail lamp
700mA 3.4-3.8V 3W 380nm UV high power led diodes for led nail lamp Specification: Absolute maximum ratings (Ta=25C) Item Symbol Absolute Maximum Rating Unit Forward Current IF 850 mA Peak Forward Current IFP 700 mA Reverse Voltage VR 5 V Power Dissipation PD mw Electrostatic discharge ESD 10000 V Operation Temperature TOPR -25~+120 ℃ Storage Temperature TSTG -40~+80 ℃ Lead Soldering Temperature TSOL 330 ℃ for 5sec Max. Electro-optical characteristics (Ta=25C) Item Symbol
High brightness 700mA 3w red high power LED emitting diode for plant grow lighting
High brightness 700mA 2.0-2.4v 3w red 620-630nm high power led diodes for plant grow lighting Specification: Absolute maximum ratings (Ta=25C) Item Symbol Absolute Maximum Rating Unit Forward Current IF 850 mA Peak Forward Current IFP 700 mA Reverse Voltage VR 5 V Power Dissipation PD mw Electrostatic discharge ESD 10000 V Operation Temperature TOPR -25~+120 ℃ Storage Temperature TSTG -40~+80 ℃ Lead Soldering Temperature TSOL 330 ℃ for 5sec Max. Electro-optical characteristic
RGB 6-pin 3w EPILEDS chip high power LED diode , super bright LEDs
rgb 6-pin 3w rgb led epileds chip 3w rgb led light high power led diode Details: Color Model Lumen Voltage/ Current Wave length (λd) RGB HH-3WP6RGB12-T 80-90LM 3.2-3.6v/700mA R:620-630nm 150-180LM 3.2-3.6v/700mA G:520-525nm 35-45LM 3.2-3.6v/700mA B:460-470nm Primary competitive advantages of HHE LED: 1. Professional LED manufacture 2 . Experience technical staff 3. Quality control 4. Completive price 5. Big order offer for free shipping by express 6. Small order available 7.
Bridgelux Chip Blue 3 Watt High Power LED Diode 700mA 460nm - 470nm
3000-3500k warm White led 3W High Power LED Diode 45mil Chip 50000Hrs 2 Years Warranty Details: bsolute maximum ratings (Ta=25C) Power dissipation Pd 1900 mW Forward current If 500 mA Reverse voltage Vr 5 V Operating temperature range Top -40 ~+100 C Storage temperature range Tstg -40~+100 C Pulse Forward Current Ifp 700 mA Electrostatic Discharge ESD 2000(HBM) V Junction temperature Tj 130 C Electro-optical characteristics (Ta=25C) Power 3w Forward current(mA) 700mA Forward
3000k - 3500k warm White 3W High Power LED Diode 45mil Chip 50000Hrs
3000-3500k warm White led 3W High Power LED Diode 45mil Chip 50000Hrs 2 Years Warranty Details: bsolute maximum ratings (Ta=25C) Power dissipation Pd 1900 mW Forward current If 500 mA Reverse voltage Vr 5 V Operating temperature range Top -40 ~+100 C Storage temperature range Tstg -40~+100 C Pulse Forward Current Ifp 700 mA Electrostatic Discharge ESD 2000(HBM) V Junction temperature Tj 130 C Electro-optical characteristics (Ta=25C) Forward voltage If=350mA VF 3 3.8 V
1W 460nm blue high power led light diode 60lm - 70lm with 120 degree viewing angles
Rohs 1w 460nm blue high power led light diode 60-70lm with 3 years guarantee SIZE: Applications: Street light, torch lights, automotive exterior, edge-lit signs, decorative, cove lighting, advertising signs, circuit board, computer, monitor, portable equipment, project building, status indicator, telephone, traffic signal lights and automotive, channel letter lighting, etc.. . Delivery time: >Sample: 1-3 days. >Normal order: 4-7days Payment terms: T/T, Western Union, Paypal
Epistar led chips red high power LED module 620nm - 625nm 700mA
high quality 1w red 660nm led red high power led with Epistar led chips for grow lighting Specifications: Color Model Lumen Voltage/ Current Wave length (λd) red HH-1WP2BR12-M 45-55LM 2.2-2.4 350mA 620-630nm SIZE: Applications: Street light, torch lights, automotive exterior, edge-lit signs, decorative, cove lighting, advertising signs, circuit board, computer, monitor, portable equipment, project building, status indicator, telephone, traffic signal lights and automotive,
High brightness 1W high power LED , 140lumen - 150 lm white LED emitter
high brightness 1W high power LED 140-150lm white led with 2 years warranty Specifications: Color Model Lumen Voltage/ Current Color temperature(Tc) white HH-1WP2BW12-M 115-125LM 3.2-3.6v/350mA 3000-3500K 5000-5500K 5500-6000K 6000-9000K Product photos: Details: bsolute maximum ratings (Ta=25C) Power dissipation Pd 1900 mW Forward current If 500 mA Reverse voltage Vr 5 V Operating temperature range Top -40 ~+100 C Storage temperature range Tstg -40~+100 C Pulse Forward
Eplieds chip 700mA 8pins 3watt rgbw high power led lights with CE Rosh certification
Eplieds chip 700mA 8pins 3watt rgbw high power led lights with CE Rosh certification Specifications: 1, Brand Name: HHE 2, Model Number: HH-3WP8RGBW13-T 3, Certification: CE/ROHS/SGS/EN62471 4, Place of Origin: China 5, Package type: Through hole 6, Current: 700mA 7, Voltage: R: 2.2-2.8V; G&B&w:3.2-3.8V 8, Chip material: InGaN/GaAsp 9, Viewing angle: 140 degree Absolute Maximum Rating Item Symbol Absolute Maximum Rating Unit Forward Current IF 700 mA Peak Forward Current IFP
350mA 3.0-3.6V Epistar Chip 1W Blue High Power Led Diodes for led grow light
350mA 3.0-3.6V Epistar Chip 1W Blue High Power Led Diodes for led grow light Specifications: Absolute Maximum Rating Item Symbol Absolute Maximum Rating Unit Forward Current IF 350 mA Peak Forward Current IFP 500 mA Reverse Voltage VR 5 V Power Dissipation PD mw Electrostatic discharge ESD 10000 V Operation Temperature TOPR -25~+120 ℃ Storage Temperature TSTG -40~+80 ℃ Lead Soldering Temperature TSOL 330 ℃ for 5sec Max. Ifp Conditions: Pulse Wide≤10msec≤1/10 Typical Optical