Semiconductor Substrate

Epi ready 4inch InP wafers N-type p-type EPF＜1000cm^2 with the thickness of 325um±50um Product abstract Our product, the "High-Purity Indium Phosphide (InP) Wafer," stands at the forefront of semiconductor innovation. Crafted from pristine indium phosphide, a binary semiconductor renowned for its superior electron velocity, our wafer offers unparalleled performance in optoelectronic applications, rapid transistors, and resonance tunneling diodes. With widespread utility in

Silicon wafer Conductivity Solar Cells Solar Cells Power Semiconductor Devices High Purity Product Description: Attributes Details Substrate Material Single Crystal Silicon Wafer Primary Flat Orientation +/-1 Deg Secondary Flat Orientation 90 Deg From Primary Flat Diameter 100 Mm +/- 0.5 Mm Oxygen Content 1.6 X 10^18 Atoms/cm3 Secondary Flat Length 18.0 +/- 2.0 Mm Thermal Expansion Coefficient 2.6·10-6°C -1 WARP 30 µm Orientation RRV 8% (6mm) A silicon wafer, commonly

Product Description: A silicon wafer, often referred to as a Si wafer, is a fundamental component in the semiconductor industry, playing a crucial role in the fabrication of electronic devices. Silicon, a semiconductor material, is used to manufacture these wafers due to its excellent electrical properties. Silicon wafers are thin, disk-shaped substrates typically made from a single crystal of silicon. The production process involves growing a cylindrical ingot of crystalline

SOI wafers 4 Inches, 6 Inches, 8 Inches, Compatible with CMOS three-layer structure Product Description: The SOI (Silicon on Insulator) wafer stands as a pioneering marvel in the realm of semiconductor technology, revolutionizing the landscape of advanced electronics. Comprising three distinct layers, this cutting-edge wafer embodies a trifecta of innovation, offering unparalleled performance, efficiency, and versatility. At its core lies a three-layer structure. The

GaP Wafer, Gallium Phosphide single crystal Orientation (111)A 0°±0.2 Solar Cells Product Description: Gallium Phosphide GaP, an important semiconductor of unique electrical properties as other III-V compound materials, crystallizes in the thermodynamically stable cubic ZB structure, is an orange-yellow semitransparent crystal material with an indirect band gap of 2.26 eV (300K), which is synthesized from 6N 7N high purity gallium and phosphorus, and grown into single crystal

GaP wafer 2inch with OF Location/Length EJ 0-1-1 / 16±1mm LED LD Mobility Min 100 Product Description: A GaP wafer is a semiconductor substrate primarily used in the fabrication of various electronic and optoelectronic devices. Gallium Phosphide (GaP) wafers exhibit exceptional optical and electronic properties that make them indispensable in the field of semiconductor technology. These wafers are renowned for their ability to generate light across different spectrums,

6 inch 8 inch SIO2 silicon dioxide wafer thickness 20um 10um-25um Crystal Substrate Product Description: The SIO2 silicon dioxide wafer, vital in semiconductor production, features a thickness ranging from 10μm to 25μm and is available in 6-inch and 8-inch diameters. Primarily serving as an essential insulating layer, it plays a pivotal role in microelectronics, offering high dielectric strength. With a refractive index approximately at 1.4458 at 1550nm, this wafer ensures

Electronic-Grade Silicon Wafers Ultra-High Purity Optoelectronic-Grade Abstract The high-purity silicon wafer we offer undergoes precision machining and strict quality control, meeting the semiconductor industry's high demands for purity and performance. These wafers are made from pure raw materials and optimized growth processes, ensuring extremely low impurity content and excellent crystal quality. Advanced cutting and polishing technologies result in a highly flat wafer

ZnTe Crystal Substrate Orientation110 10x10x0.5mm 10x10x1mm For THz Detection, THz Generation ZnTe crystals are excellent terahertz crystals lt;110> Oriented ZnTe crystals in which THz pulses are detected by free space electro-optical detection. Terahertz pulses and visible light pulses propagate in a common line through the ZnTe crystal. The terahertz pulse produces birefringence in the ZnTe crystal, which is read out by the linearly polarized visible light pulse. When the

6 Inch LiTaO3 LiNbO3 Wafer Black Polarized For SAW / BAW Applications 128 Degrees Y Z-Cut Lithium niobate (LiNbO3) single crystal is a ferroelectric crystal with high electromechanical coupling coefficient and low propagation loss, which can be used to fabricate SAW devices with up to 50% bandwidth. The acoustic surface wave properties of lithium niobate single crystal materials are closely related to their orientation and propagation direction. According to different cutting

VGF 2 Inch 4Inch N Type P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth Gallium arsenide can be made into semi-insulating high-resistance materials with resistivity more than 3 orders of magnitude higher than silicon and germanium, which are used to make integrated circuit substrates, infrared detectors, gamma photon detectors, etc. Because its electron mobility is 5 to 6 times greater

2inch 3inch 4inch LNOI LiNbO3 Wafer Lithium Niobate Thin Films Layer On Silicon Substrate LNOI wafer preparation process is shown below, including the following five steps: (1) Ion Implantation: The ion implantation machine is used to drive high-energy He ions from the upper surface of lithium niobate crystal. When He ions with specific energy enter the crystal, they will be obstructed by atoms and electrons in LN crystal and gradually slow down and stay at A specific depth

2inch 3inch 4inch InAs Wafer Crystal Substrates N-Type For MBE 99.9999% Monocrystalline Introduce of InAs substrateIndium InAs or indium mono-arsenide is a semiconductor composed of indium and arsenic. It has the appearance of a gray cubic crystal with a melting point of 942°C. Indium arsenide is used to construct infrared detectors with a wavelength range of 1-3.8um. The detector is usually a photovoltaic photodiode. Cryogenic cooling detectors have lower noise, but InAs

2inch/3inch /4inch /6inch S-C-N Type/ semi-insulation /Si-doped Gallium arsenide GaAs WaferProduct DescriptionOur 2’’ to 6’’ semi-conducting & semi-insulating GaAs crystal & wafer are wildly used in semiconductor integrated circuit application & LED general lighting application.GaAs Wafer Feature and ApplicationFeatureApplication fieldHigh electron mobilityLight emitting diodesHigh frequencyLaser diodesHigh conversion efficiencyPhotovoltaic devicesLow power consumptionHigh

6inch 8inch 2inch 1inch FZ CZ N-type polished silicon wafer DSP SiO2 wafers Silicon oxide wafer Polished Silicon Wafer High-purity (11N) 1-12 inch single- and double-polished Czochralski wafers Polished Silicon Wafer High-purity (11N) 1-12 inch single- and double-polished Czochralski wafers Sizes 1" 2" 3" 4" 5" 6" 8" 12" and special size and specification wafers Surface Single polishing disc, double polishing disc, abrasive disc, corrosion disc, cutting di

2inch N-type single side polished Ge wafers Germanium substrate Ge window for infrared Co2 lasers Diameter:25.4mm Thickness:0.325mm Shanghai Famous Trade Co,.Ltd offers 2”, 3”, 4”, and 6” germanium wafers, which is short for Ge wafers grown by VGF / LEC. Lightly doped P and N-type Germanium wafers can be also used for the Hall effect experiments. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High