Memory IC Chip

IS43DR16640B-25DBLI Memory IC Chip 1Gbit Parallel 400MHz SDRAM DDR2 Memory IC Product Overview The IS43DR16640B-25DBLI is a high-performance 1Gbit DDR2 SDRAM memory IC designed for parallel interface applications operating at 400MHz clock frequency. Technical Specifications Specification Details Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR2 Memory Size 1Gbit Memory Organization 64M x 16 Memory Interface Parallel Clock Frequency 400 MHz Write Cycle Time 15ns

EDB4432BBPA-1D-F-R Memory IC Chip 4Gbit Mobile LPDDR2 SDRAM Memory Chip in WFBGA168 Package Product Overview The EDB4432BBPA-1D-F-R is a single-channel Mobile LPDDR2 Synchronous Dynamic Random Access Memory (SDRAM) chip with a capacity of 4Gbit, housed in a WFBGA-168 package. Technical Specifications Specification Details Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR2 Memory Size 4Gbit Memory Organization 128M x 32 Memory Interface Parallel Clock

TC58NVG1S3HBAI6 Memory IC Chip Single 3.3V 2Gbit NAND Electrically Erasable And Programmable Read-Only Memory Product Overview The TC58NVG1S3HBAI6 is a single 3.3V 2Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E²PROM) organized as (2048 + 128) Bytes × 64 pages × 2048 blocks. The device features two 2176-byte static registers that enable program and read data transfer between the register and memory cell array in 2176-byte

H9HCNNN8KUMLHR-NME Memory IC Chip 8GB LPDDR4 SDRAM Memory Chip in FBGA200 Package Product Overview The H9HCNNN8KUMLHR-NME is a high-performance mobile LPDDR4 SDRAM memory IC featuring 8Gb capacity (256M x 32) and operating at 2.133 GHz frequency. This component is housed in a compact 200-FBGA (10x15) package designed for mobile applications. Technical Specifications Specification Details Type Volatile memory Technology DRAM Format SDRAM - Mobile LPDDR4 Capacity 8Gb (256M x 32

NT5CB128M16JR-FL Memory IC Chip High-Speed Automotive DDR3 2Gb SDRAM Memory IC Product Overview The NT5CB128M16JR-FL DDR3 SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM. This automotive-grade memory chip utilizes an 8n prefetch architecture to achieve high-speed operation, combined with an interface designed to transfer two data words per clock cycle at the I/O pins. Technical Features Fully DDR3 Compliant 8n Prefetch Architectu

MT29F2G08ABAEAH4-IT:E Memory IC Chip 2Gbit Parallel NAND Flash Memory Chip VFBGA63 The MT29F2G08ABAEAH4-IT:E is a 2Gbit parallel NAND Flash memory IC featuring a 63-VFBGA (9x11) package configuration. Product Specifications Specification Details Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND Memory Size 2Gbit Memory Organization 256M x 8 Memory Interface Parallel Voltage Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface

MT52L256M32D1PF-107 WT:B Memory IC Chip 8Gbit LPDDR3 SDRAM Mobile Memory in FBGA178 Package Product Overview MT52L256M32D1PF-107 WT:B is an 8Gbit LPDDR3 Synchronous Dynamic Random Access Memory (SDRAM) chip designed for mobile applications. Technical Specifications Parameter Specification Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory Organization 256M x 32 Clock Frequency 933 MHz Voltage Supply 1.2V Operating Temperature -30

MT41K256M16TW-107:P Memory IC Chip 4Gbit DDR3L SDRAM Memory Chip FBGA96 Product Overview MT41K256M16TW-107:P is a 4Gbit DDR3L Synchronous Dynamic Random Access Memory (SDRAM) chip, featuring a low voltage version of DDR3 (1.5V) SDRAM technology. Technical Specifications Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 4Gbit Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz Access Time 20 ns Voltage - Supply 1.283V ~ 1

SDINBDG4-8G Memory IC Chip 8GB iNAND 7250 eMMC 5.1 Flash Drives SDINBDG4-8G is an 8GB iNAND 7250 industrial embedded flash device that delivers high reliability and endurance for industrial applications across a wide range of operational requirements. Product Specifications Specification Details Series iNAND 7250 Package / Case Non-standard Memory Size 8 GB Sequential Read 170 MB/s Sequential Write 300 MB/s Interface Type eMMC 5.1 HS400 Supply Voltage - Min 2.7 V Supply

CXDB3ABAM-MK-A Memory IC Chip 8Gbit LPDDR4/4X Memory Chip FBGA200 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen in 1996, Mingjiada

CAT24C128WI-GT3 Memory IC Chip 128Kbit EEPROM Memory SOIC8 EEPROM Serial 128Kb I2C Product Overview The CAT24C128WI-GT3 is a 128-Kb EEPROM memory IC organized as 16,384 words of 8 bits each. This device features a 64-byte page write buffer and supports Standard (100 kHz), Fast (400 kHz), and Fast-Plus (1 MHz) I2C protocols. Write operations can be inhibited using the WP pin for full memory protection. On-chip ECC (Error Correction Code) makes this device suitable for high

H9HCNNN8KUMLHR Memory IC Chip 2-Channel High-Speed 8Gbit 3.733GHz SDRAM LPDDR4 Memory The H9HCNNN8KUMLHR is a high-performance LPDDR4 SDRAM memory device featuring a 2-channel architecture with 8 banks per channel, designed for high-speed data processing applications. Product Overview H9HCNNN8KUMLHR is a high-speed synchronous DRAM LPDDR4 memory device internally configured as a 2-channel memory with 8-bank memory per each channel. Key Features VDD1 = 1.8V (1.7V to 1.95V)

CXDB3ABAM-MK Memory IC Chip 8Gbit LPDDR4X Memory In FBGA-200 Package CXDB3ABAM-MK is an 8Gbit LPDDR4X memory die in FBGA-200 packaging, specifically engineered for high-performance and low-power applications. Specifications Density 8Gbit Type LPDDR4/4X Package FBGA-200 Data Rate 3733Mbps Operating Temperature Range -25°C to +85°C Key Features 8Gbit bit width with FBGA-200 packaging Wide operating temperature range: -25°C to +85°C High data rate of 3733Mbps or higher Compliant

CXDB4ABAM-ML Memory IC Chip 16Gbit LPDDR4X SDRAM Memory In FBGA-200 Package Product Overview The CXDB4ABAM-ML is a 16Gbit LPDDR4X synchronous dynamic random-access memory utilizing an FBGA-200 package, designed for high-performance applications. Technical Specifications Capacity 16Gbit Type LPDDR4X SDRAM Package 200-FBGA Voltage VDD1/VDD2/VDDQ: 1.8V/1.1V/1.1V & 0.6V Operating Temperature Range -10°C to 130°C Supply Voltage Range 4.5V to 7.5V Dimensions Length 8.9mm, Width 3

TH58NYG2S3HBAI4 Memory IC Chip 4Gbit Synchronous NAND Flash Memory IC TFBGA-63 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen in 1996,

MX25V16066ZNI02 Memory IC Chip 16Mbit MXSMIO™ Non-Volatile NOR Flash Memory IC WSON8 Product Overview The MX25V16066ZNI02 is a 16Mbit MXSMIO™ Non-Volatile NOR Flash Memory IC designed for industrial applications requiring reliable data storage with fast access times. Technical Specifications Series MXSMIO™ Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR (SLC) Memory Size 16Mbit Memory Organization 8M x 2, 16M x 1 Memory Interface SPI Clock Frequency 80 MHz

MT41K256M16TW-107 IT:P Memory IC Chip 4Gbit DDR3L SDRAM Memory Chip in FBGA96 Package Product Overview MT41K256M16TW-107 IT:P is a 4Gbit DDR3L Synchronous Dynamic Random Access Memory (SDRAM) chip. DDR3L SDRAM (1.35V) is a low voltage version of the standard DDR3 (1.5V) SDRAM, offering improved power efficiency while maintaining compatibility. Technical Specifications Type SDRAM - DDR3L Memory Size 4 Gbit Data Bus Width 16 bit Maximum Clock Frequency 933 MHz Package / Case

K4UHE3D4AB-MGCL Memory IC Chip 2.5V To 9V DDR Memory Chip In BGA Package Product Description Of K4UHE3D4AB-MGCL K4UHE3D4AB-MGCL is 2.5V To 9V DDR Memory Chip In BGA Package. Specifications Of K4UHE3D4AB-MGCL Operating temperature range: -40°C to 90°C Supply voltage range: 2.5V to 9V Dimensions: 1.5mm × 8.1mm × 1.2mm Applications Of K4UHE3D4AB-MGCL Smartphones Tablets IoT devices Other Electronic Components In Stock Part Number Package MAX77643BANA 25-WLP MAX77643CANA 25-XFBGA

MX25U25672GZNI40 Memory IC Chip 256Mbit MXSMIO™ Serial NOR Flash Memory IC WSON8 Product Overview The MX25U25672GZNI40 is a 256Mbit MXSMIO™ Serial NOR Flash Memory IC. Macronix Serial Multi I/O (MXSMIO™) Flash provides both Single I/O and Multi-I/O interfaces for enhanced performance and flexibility. Technical Specifications Density 256Mbit Operating Voltage (Vcc) 1.65V - 2V Frequency & Bus Width 133MHz (x1, x2), 120MHz (x4) Package 6x5mm 8-WSON Temperature Range Industrial

CXDB4CBAM-ML-A Memory IC Chip 8Gbit LPDDR4/4X Ultra-Low Power Double Data Rate Dynamic Random Access Memory [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands.