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China Memory IC Chip S26KS512SDABHN030 High Performance 166MHz 96 ns NOR Memory IC for sale

Memory IC Chip S26KS512SDABHN030 High Performance 166MHz 96 ns NOR Memory IC

Price: Contact for Sample
MOQ: 10
Delivery Time: 3-5 work days

Memory IC Chip S26KS512SDABHN030 High Performance 166MHz 96 ns NOR Memory IC MJD Advantage 15 years experience for electronic components Secure Ordering Excellent Feedback Delivery Date Guaranteed 100% Low Price Guaranteed Export to 108 countries, customer satisfaction rate: 99.9% Company Profile Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen in 1996, Mingjiada has

China Memory IC Chip S28HS01GTGZBHM030 200MHz 1Gbit SPI Flash - NOR Memory IC for sale

Memory IC Chip S28HS01GTGZBHM030 200MHz 1Gbit SPI Flash - NOR Memory IC

Price: Contact for Sample
MOQ: 10
Delivery Time: 3-5 work days

Memory IC Chip S28HS01GTGZBHM030 200MHz 1Gbit SPI Flash - NOR Memory IC [MJD Advantage]+ 15 years experience for electronic components+ Secure Ordering+ Excellent Feedback+ Delivery Date Guaranteed+ 100% Low Price Guaranteed+ Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile]Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen in 1996, Mingjiada has

China M15T4G16256A-DEBG2C Memory IC Chip High-Speed 933MHz DDR3 SDRAM Memory for sale

M15T4G16256A-DEBG2C Memory IC Chip High-Speed 933MHz DDR3 SDRAM Memory

Price: Contact for Sample
MOQ: 10
Delivery Time: 5-8 work days

M15T4G16256A-DEBG2C Memory IC Chip High-Speed 933MHz DDR3 SDRAM Memory Product Description Of M15T4G16256A-DEBG2C The M15T4G16256A-DEBG2C is a 4Gb double data rate 3 (DDR3) DRAM that utilises a double data rate architecture to achieve high-speed operation. It is internally configured as an eight-bank DRAM. The 4Gb chip is organised into 32Mbit x 16 I/O x 8 memory devices. These synchronous devices achieve high-speed, dual-data-rate data rates of up to 1866 Mb/sec/pin for

China GD25Q256EYIGR Memory IC Chip 256Mbit SPI NOR Flash Memory IC WSON-8 Data Storage IC for sale

GD25Q256EYIGR Memory IC Chip 256Mbit SPI NOR Flash Memory IC WSON-8 Data Storage IC

Price: Contact for Sample
MOQ: 10
Delivery Time: 5-8 work days

GD25Q256EYIGR Memory IC Chip 256Mbit SPI NOR Flash Memory IC WSON-8 Data Storage IC Product Description Of GD25Q256EYIGR GD25Q256EYIGR is a 256Mb SPI-interface NOR Flash memory device from the GD25Q series, housed in a WSON-8 package, and is suitable for code and data storage. Specification Of GD25Q256EYIGR Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 256Mbit Memory Organization 32M x 8 Memory Interface SPI - Quad I/O Clock Frequency 133 MHz

China MT60B1G16HC-52B:G Memory IC Chip 16Gbit DDR5 SDRAM Memory Chip FBGA-102 for sale

MT60B1G16HC-52B:G Memory IC Chip 16Gbit DDR5 SDRAM Memory Chip FBGA-102

Price: Contact for Sample
MOQ: 10
Delivery Time: 5-8 work days

MT60B1G16HC-52B:G Memory IC Chip 16Gbit DDR5 SDRAM Memory Chip FBGA-102​ Product Description Of MT60B1G16HC-52B:G MT60B1G16HC-52B:G is a 16Gbit (1G × 16) DDR5 SDRAM memory chip with a speed rating of DDR5-5200 (5200MT/s), housed in a 102-ball FBGA package. Specification Of MT60B1G16HC-52B:G Memory Format DRAM Technology SDRAM - DDR5 Memory Size 16Gbit Memory Organization 1G x 16 Memory Interface POD Features Of MT60B1G16HC-52B:G Memory architecture: 16 internal banks,

China MX29LV800CBXBI-70G Memory IC Chip 8Mbit Parallel NOR Flash Memory IC TFBGA-48 for sale

MX29LV800CBXBI-70G Memory IC Chip 8Mbit Parallel NOR Flash Memory IC TFBGA-48

Price: Contact for Sample
MOQ: 10
Delivery Time: 5-8 work days

MX29LV800CBXBI-70G Memory IC Chip 8Mbit Parallel NOR Flash Memory IC TFBGA-48 Product Description Of MX29LV800CBXBI-70G MX29LV800CBXBI-70G is an 8Mbit parallel NOR flash memory device in a 48-pin TFBGA package, with an access time of 70 ns and an industrial-grade operating temperature range of -40°C to 85°C. Specification Of MX29LV800CBXBI-70G Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 8Mbit Memory Organization 1M x 8 Memory Interface

China S28HL02GTFGBHI050 Memory IC Chip 2.7V To 3.6V 2Gb 266 MByte/s SEMPER™ NOR Flash Memory for sale

S28HL02GTFGBHI050 Memory IC Chip 2.7V To 3.6V 2Gb 266 MByte/s SEMPER™ NOR Flash Memory

Price: Contact for Sample
MOQ: 10
Delivery Time: 3-5 work days

S28HL02GTFGBHI050 Memory IC Chip 2.7V To 3.6V 2Gb 266 MByte/s SEMPER™ NOR Flash Memory [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen

China S28HL02GTFGBHI053 Memory IC Chip 2.7V To 3.6V 2Gb Octal SEMPER™ NOR Flash Memory IC for sale

S28HL02GTFGBHI053 Memory IC Chip 2.7V To 3.6V 2Gb Octal SEMPER™ NOR Flash Memory IC

Price: Contact for Sample
MOQ: 10
Delivery Time: 3-5 work days

S28HL02GTFGBHI053 Memory IC Chip 2.7V To 3.6V 2Gb Octal SEMPER™ NOR Flash Memory IC [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen in

China XT25Q256FWOIGT 256Mbit Serial NOR Flash Memory IC Chip with 1.65V ~ 2.0V Voltage in WSON8 6x5mm Package for sale

XT25Q256FWOIGT 256Mbit Serial NOR Flash Memory IC Chip with 1.65V ~ 2.0V Voltage in WSON8 6x5mm Package

Price: Contact for Sample
MOQ: 10
Delivery Time: 5-8 work days

XT25Q256FWOIGT Memory IC Chip 256Mbit Serial NOR Flash Memory WSON8 The XT25Q256FWOIGT is a 256-Mbit (32-MB) 1.8V multi-I/O serial NOR Flash memory device supporting standard, dual-channel, and quad-channel SPI, as well as QPI modes. This advanced memory solution offers comprehensive sector/block erase capabilities and robust security features including a 3*1024-byte security register with OTP lock and a 128-bit unique ID. Key Specifications The device operates at 1.65V to 2

China GD5F1GM7UEWIGR 1 Gbit SPI NAND Flash Memory IC Chip with SPI Interface in WSON-8 Package for sale

GD5F1GM7UEWIGR 1 Gbit SPI NAND Flash Memory IC Chip with SPI Interface in WSON-8 Package

Price: Contact for Sample
MOQ: 10
Delivery Time: 5-8 work days

GD5F1GM7UEWIGR Memory IC Chip 1Gbit SPI NAND Flash Memory IC WSON8 Data Storage IC Product Overview The GD5F1GM7UEWIGR is a 1Gbit SPI NAND Flash memory chip from the GD5F1GM7UE series, featuring a compact WSON-8 (6x5mm) package. This component delivers an ultra-cost-effective, high-density non-volatile memory storage solution for embedded systems, built around an industry-standard NAND Flash memory core. It serves as an excellent alternative to SPI NOR and standard parallel

China KLM8G1GETF-B041 Memory IC Chip 8GB eMMC 5.1 Memory IC For Consumer Electronics for sale Video

KLM8G1GETF-B041 Memory IC Chip 8GB eMMC 5.1 Memory IC For Consumer Electronics

Price: Contact for Sample
MOQ: 10
Delivery Time: 5-8 work days

KLM8G1GETF-B041 Memory IC Chip 8GB eMMC 5.1 Memory IC For Consumer Electronics Product Description Of KLM8G1GETF-B041 KLM8G1GETF-B041 is Memory IC - 8 GB Memory Chip(eMMC 5.1), package is BGA153. Specification Of KLM8G1GETF-B041 Part Number: KLM8G1GETF-B041 Package: BGA153 Type: 8GB Memory Chip Version: EMMC 5.1 Density: 8 GB Voltage: 1.8, 3.3 V / 3.3 V Features Of Integrated Circuit Chip​ Voltage: 1.8, 3.3 V / 3.3 V Package Size: 11.5 x 13 x 0.8 mm Temperature: -25 °C ~ 85

China MT53D512M16D1DS-046 AIT:D 8Gbit 2.133 GHz Mobile LPDDR4 Memory IC Chip - High Speed SDRAM for Mobile Applications for sale Video

MT53D512M16D1DS-046 AIT:D 8Gbit 2.133 GHz Mobile LPDDR4 Memory IC Chip - High Speed SDRAM for Mobile Applications

Price: Negotiable
MOQ: 10
Delivery Time: 3-5 work days

MT53D512M16D1DS-046 AIT:D Memory IC Chip 8Gbit 2.133 GHz SDRAM - Mobile LPDDR4 Memory IC Supplier Advantages 15+ years experience in electronic components Secure ordering process Excellent customer feedback Guaranteed delivery dates 100% low price guarantee Export to 108 countries with 99.9% customer satisfaction rate Company Profile Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components from world-renowned brands. Founded

China KHA884901X-MC12 Memory IC Chip 8GB HBM2 Aquabolt Series DRAM Memory with 1.2V IO Voltage and 1000MHz Frequency in MPGA Package for sale

KHA884901X-MC12 Memory IC Chip 8GB HBM2 Aquabolt Series DRAM Memory with 1.2V IO Voltage and 1000MHz Frequency in MPGA Package

Price: Contact for Sample
MOQ: 10
Delivery Time: 5-8 work days

KHA884901X-MC12 Memory IC Chip 8GB HBM2 Aquabolt Series DRAM Memory The KHA884901X-MC12 is an HBM2 Aquabolt Series DRAM Memory Chip optimized for high-bandwidth operation across multiple DRAM devices. This advanced memory solution supports up to 8 channels per MPGA package, with each die contributing additional capacity and channels to the stack. Product Specifications Series HBM2 Aquabolt Series Capacity 8GB Organization 1024 Refresh 32ms Speed Up to 6.4 Gbps IO Voltage 1.2V

China W631GG6NB-15 Memory IC Chip 1Gbit SDRAM DDR3 667MHz VFBGA96 for sale Video

W631GG6NB-15 Memory IC Chip 1Gbit SDRAM DDR3 667MHz VFBGA96

Price: Contact for Sample
MOQ: 10
Delivery Time: 3-5 work days

W631GG6NB-15 Memory IC Chip 1Gbit SDRAM DDR3 Memory IC 667MHz VFBGA96 MJD Advantage 15 years experience in electronic components Secure ordering process Excellent customer feedback Guaranteed delivery dates 100% low price guarantee Export to 108 countries with 99.9% customer satisfaction rate Company Profile Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components from world-renowned brands. Founded in Shenzhen in 1996,

China MT41K128M16JT-125 IT:K 2Gbit DDR3L SDRAM Memory IC Chip with 800MHz Clock Frequency in FBGA-96 Package for sale

MT41K128M16JT-125 IT:K 2Gbit DDR3L SDRAM Memory IC Chip with 800MHz Clock Frequency in FBGA-96 Package

Price: Contact for Sample
MOQ: 10
Delivery Time: 5-8 work days

MT41K128M16JT-125 IT:K Memory IC Chip 2Gbit DDR3L SDRAM Memory Chip in FBGA96 Package Product Overview MT41K128M16JT-125 IT:K is a 2Gbit capacity DDR3L Synchronous Dynamic Random-Access Memory (SDRAM) in an FBGA-96 package, designed for high-performance applications requiring reliable memory solutions. Technical Specifications Type SDRAM - DDR3L Memory Size 2 Gbit Data Bus Width 16 bit Maximum Clock Frequency 800 MHz Package / Case FBGA-96 Organization 128 M x 16 Access Time

China CYEL18V2563-200BKXE Memory IC Chip 256MBit Pseudostatic RAM with 200MHz Interface for Automotive Applications for sale

CYEL18V2563-200BKXE Memory IC Chip 256MBit Pseudostatic RAM with 200MHz Interface for Automotive Applications

Price: Contact for Sample
MOQ: 10
Delivery Time: 3-5 work days

CYEL18V2563-200BKXE Memory IC Chip 256MBit High Bandwidth Pseudostatic RAM Memory The CYEL18V2563-200BKXE 256 Mb pSRAM device is a high-speed CMOS, self-refresh DRAM with xSPI (Octal) interface. This advanced memory solution features dynamic cells that require periodic refresh, with integrated refresh control logic that manages refresh operations automatically when the memory is not being actively accessed. This architecture provides the host system with the appearance of

China CYEL18V2562-200BKXE Memory IC Chip 256 MBit Pseudostatic RAM with 1.8 V Operating Voltage and 200MHz Interface Frequency for sale

CYEL18V2562-200BKXE Memory IC Chip 256 MBit Pseudostatic RAM with 1.8 V Operating Voltage and 200MHz Interface Frequency

Price: Contact for Sample
MOQ: 10
Delivery Time: 3-5 work days

CYEL18V2562-200BKXE Memory IC Chip Low-Power High Bandwidth Pseudostatic RAM Memory Product Overview The CYEL18V2562-200BKXE 256 Mb pSRAM device is a high-speed CMOS, self-refresh DRAM with HYPERBUS™ interface. The DRAM array uses dynamic cells that require periodic refresh. Refresh control logic within the device manages refresh operations on the DRAM array when the memory is not being actively read or written by the HYPERBUS™ interface master (host). Since the host is not

China CYEL18V5122-200BKXE 512Mbit Pseudostatic RAM Memory IC Chip with HYPERBUS Interface and 1.8V Operating Voltage for sale

CYEL18V5122-200BKXE 512Mbit Pseudostatic RAM Memory IC Chip with HYPERBUS Interface and 1.8V Operating Voltage

Price: Contact for Sample
MOQ: 10
Delivery Time: 5-8 work days

CYEL18V5122-200BKXE Memory IC Chip 512Mbit Pseudostatic RAM Memory Chip from NewSpace Memory Product Overview The CYEL18V5122-200BKXE is a 512Mbit radiation-tolerant, low-power, high-bandwidth Pseudostatic RAM (pSRAM) that combines the benefits of both DRAM and SRAM technologies. Internally structured like DRAM but externally functioning as an 8-channel serial SRAM, this advanced memory solution delivers high-speed performance in a compact, low-pincount plastic package. Ideal

China CYEL15B102N-ZS60XM Memory IC Chip 2 MBit F-RAM Nonvolatile Memory with 2V to 3.6V in PG-TSOP-44 Package for sale

CYEL15B102N-ZS60XM Memory IC Chip 2 MBit F-RAM Nonvolatile Memory with 2V to 3.6V in PG-TSOP-44 Package

Price: Contact for Sample
MOQ: 10
Delivery Time: 3-5 work days

CYEL15B102N-ZS60XM Memory IC Chip 2V To 3.6V 2 MBit Serial F-RAM Memory In PG-TSOP-44 Package Product Overview The CYEL15B102N-ZS60XM is a 128K * 16 nonvolatile memory that reads and writes similar to a standard SRAM. This ferroelectric random access memory (F-RAM) is nonvolatile, ensuring data retention for over 121 years after power removal. It eliminates reliability concerns, functional disadvantages, and system design complexities associated with battery-backed SRAM

China CYEL18V5123-200BKXE 512Mbit 200MHz Radiation Tolerant Pseudostatic RAM Memory IC Chip pSRAM for sale

CYEL18V5123-200BKXE 512Mbit 200MHz Radiation Tolerant Pseudostatic RAM Memory IC Chip pSRAM

Price: Contact for Sample
MOQ: 10
Delivery Time: 5-8 work days

CYEL18V5123-200BKXE Memory IC Chip 512Mbit KS-3 Pseudostatic RAM Memory Chip with 512Mbit pSRAM Memory IC Product Overview The CYEL18V5123-200BKXE is a 512Mbit radiation-tolerant, low-power, high-bandwidth Pseudostatic RAM Memory Chip (pSRAM) that combines the advantages of both DRAM and SRAM technologies. This advanced memory solution features internal DRAM architecture with external 8-channel serial SRAM functionality. Technical Specifications Parameter Specification