Wideband LNA
Wide Band Low Noise Amplifier 1-2 GHz P1dB 20 dBm RF Power Amplifier
Wide Band Low Noise Amplifier 1-2 GHz P1dB 20 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
Wide Band Low Noise Amplifier 1-2 GHz P1dB 15 dBm RF Power Amplifier
Wide Band Low Noise Amplifier 1-2 GHz P1dB 15 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
Wide Band Low Noise Amplifier 0.8-6 GHz P1dB 10 dBm RF Power Amplifier
Wide Band Low Noise Amplifier 0.8-6 GHz P1dB 10 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
Wide Band Low Noise Amplifier 0.8-6 GHz P1dB 20 dBm RF Power Amplifier
Wide Band Low Noise Amplifier 0.8-6 GHz P1dB 20 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
Wide Band Low Noise Amplifier 2-4 GHz P1dB 5 dBm RF Power Amplifier
Wide Band Low Noise Amplifier 2-4 GHz P1dB 5 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
0.5 To 2.5 GHz Wideband LNA P1dB 13 dBm RF Power Amplifier Ultra Low Noise LNA
Wide Band Low Noise Amplifier 0.5-2 GHz P1dB 13 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
0.1 To 40 GHz Wideband LNA Low Noise RF Amplifier Psat 19 dBm
Wide Band Low Noise Amplifier 0.1-40 GHz Psat 19 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
0.4 To 6 GHz Wideband Low Noise Amplifier P1dB 10 dBm RF Power Module
Wide Band Low Noise Amplifier 0.4-6 GHz P1dB 10 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
0.5 - 4 GHz Wideband Low Noise Amplifier P1dB 15 dBm Uwb LNA RF Power Amplifier
Wide Band Low Noise Amplifier 0.5-4 GHz P1dB 15 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
0.01 - 1.5 GHz Wideband LNA P1dB 5 dBm RF Ultra Low Noise Audio Amplifier
Wide Band Low Noise Amplifier 0.01-1.5 GHz P1dB 5 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL
Wideband LNA 2 - 4 GHz P1dB 18 dBm RF Power LNA Device Low Noise
Wide Band Low Noise Amplifier 2-4 GHz P1dB 18 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
120 mA Wideband LNA 0.5-1 GHz P1dB 10 dBm RF Very Low Noise Amplifier
Wide Band Low Noise Amplifier 0.5-1 GHz P1dB 10 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
Wide Band LNA Low Noise Amplifiers 0.5 To 2 GHz P1dB 10 dBm LNA In Communication
Wide Band Low Noise Amplifier 0.5-2 GHz P1dB 10 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
0.5 - 18 GHz Wideband Low Noise Amplifier P1dB 10 dBm Balanced LNA RF Power Amplifier
Wide Band Low Noise Amplifier 0.5-18 GHz P1dB 10 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
0.5 - 2 GHz Wideband Low Noise Amplifier P1dB 18 dBm RF Signal Amplifier
Wide Band Low Noise Amplifier 0.5-2 GHz P1dB 18 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
0.5 - 2 GHz 12 V Wideband Low Noise Amplifier P1dB 10 dBm linear RF power amplifier
Wide Band Low Noise Amplifier 0.5-2 GHz P1dB 10 dBm W RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL
0.5-2 GHz P1dB 15 dBm Wideband Low Noise Amplifier RF Transmitter Amplifier
Wide Band Low Noise Amplifier 0.5-2 GHz P1dB 15 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
CE 0.5 - 18 GHz LNA Low Noise Amplifiers Wide Band IP2 11 dBm RF Power Amplifier
Wide Band Low Noise Amplifier 0.5-18 GHz IP2 11 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
P1dB 12 dBm 0.5-2 GHz Wideband Low Noise Amplifier RF Power Amplifier
P1dB 12 dBm 0.5-2 GHz Wideband Low Noise Amplifier RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX
P1dB 19 dBm 0.5 - 1 GHz Wideband Low Noise Amplifier RF Power Amplifier
Wide Band Low Noise Amplifier 0.5-1 GHz P1dB 19 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX