Nanjing Shinewave Technology Co., Ltd.
                                                                                                           
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18 Years
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Wideband LNA

China 0.5-2 GHz Low Noise Amplifier Wide Band  P1dB 20 dBm RF Power Amplifier for sale

0.5-2 GHz Low Noise Amplifier Wide Band P1dB 20 dBm RF Power Amplifier

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 working days

Wide Band Low Noise Amplifier 0.5-2 GHz P1dB 20 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX

China 0.5-2.5 GHz LNA Low Noise Amplifiers P1dB 10 dBm Low Noise RF Pre Amplifier for sale

0.5-2.5 GHz LNA Low Noise Amplifiers P1dB 10 dBm Low Noise RF Pre Amplifier

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 working days

Wide Band Low Noise Amplifier 0.5-2.5 GHz P1dB 10 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL

China 0.5 - 2 GHz Wide Band LNA Low Noise Amplifiers P1dB 10 dBm RF Low Noise Pre Amplifier for sale

0.5 - 2 GHz Wide Band LNA Low Noise Amplifiers P1dB 10 dBm RF Low Noise Pre Amplifier

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 working days

Wide Band Low Noise Amplifier 0.5-2 GHz P1dB 10 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX

China 50 X 30 X 15 mm Wideband LNA 0.5 - 20 GHz P1dB 12 dBm RF Low Noise Audio Preamplifier for sale

50 X 30 X 15 mm Wideband LNA 0.5 - 20 GHz P1dB 12 dBm RF Low Noise Audio Preamplifier

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 working days

Wide Band Low Noise Amplifier 0.5-20 GHz P1dB 12 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX

China 0.5-18 GHz Wideband Low Noise Amplifier RF Amplifier Low Noise  P1dB -2 dBm for sale

0.5-18 GHz Wideband Low Noise Amplifier RF Amplifier Low Noise P1dB -2 dBm

Price: Negotiable
MOQ: 1/pcs
Delivery Time: 5-8 working days

Wide Band Low Noise Amplifier 0.5-18 GHz P1dB -2 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a 50Ω system. ELECTRICAL SPECIFICATIONS@25℃ PARAMETER MIN TYPICAL MAX

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