SOT-89 D882 NPN Electronic Transistors Plastic Encapsulate Power Dissipation

Price Negotiable

Price: Negotiable

MOQ: 1000PCS

Delivery Time: 3weeks

Brand: UCHI

Product Description

SOT-89 D882 Plastic-Encapsulate Transistors

Features

Power dissipation

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	40	V
VCEO	Collector-Emitter Voltage	30	V
VEBO	Emitter-Base Voltage	6	V
IC	Collector Current -Continuous	3	A
PC	Collector Power Dissipation	0.5	W
TJ	Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC = 100μA, IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC = 10mA, IB=0	30			V
Emitter-base breakdown voltage	V(BR)EBO	IE= 100μA, IC=0	6			V
Collector cut-off current	ICBO	VCB= 40V, IE=0			1	µA
Collector cut-off current	ICEO	VCE= 30V, IB=0			10	µA
Emitter cut-off current	IEBO	VEB= 6V, IC=0			1	µA
DC current gain	hFE(1)	VCE=2V, IC= 1A	60		400
	hFE(2)	VCE=2V, IC= 100mA	32
Collector-emitter saturation voltage	VCE(sat)	IC= 2A, IB= 0.2 A			0.5	V
Base-emitter saturation voltage	VBE(sat)	IC= 2A, IB= 0.2 A			1.5	V
Transition frequency	fT	VCE= 5V , Ic=0.1A f =10MHz	50			MHz