IRF1404PBF 40V 162A N-Channel MOSFET with Ultra-Low 1.7mΩ RDS(on) TO-220 Package 100% Avalanche Tested Fast Switching High Power Density and Industrial-Grade Reliability
IRF1404PBF 40V 162A N-Channel MOSFET with Ultra-Low 1.7mandOmega; RDS(on) TO-220 Package 100% Avalanche Tested Fast Switching High Power Density andamp; Industrial-Grade Reliability
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Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175anddeg;C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
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Description
Seventh Generation HEXFETandreg; Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
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Applications
High-Current Power switching
High-power DC-DC converters
Power management modules
Industrial-grade switching power supplies
Motor Drive Systems
Power tool motor contro
Automotive starter motor drives
Industrial servo drivers
Energy Conversion Systems
Solar inverter power stages
Uninterruptible power supplies (UPs)
Battery management systems (BMS)
Transportation Applications
Electric vehicle powertrains
Forklift electric drives0
Rail transit auxiliary power
Special Industrial Applications
Welding equipment power supplies
High-current pulse generators
Electromagnetic drive devices
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INFORMATION
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Category
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Mfr
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Series
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Packaging
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Tube
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Part Status
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Not For New Designs
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FET Type
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Technology
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Drain to Source Voltage (Vdss)
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40 V
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Current - Continuous Drain (Id) @ 25anddeg;C
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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4mOhm @ 121A, 10V
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Vgs(th) (Max) @ Id
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4V @ 250andmicro;A
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Gate Charge (Qg) (Max) @ Vgs
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196 nC @ 10 V
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Vgs (Max)
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andplusmn;20V
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Input Capacitance (Ciss) (Max) @ Vds
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5669 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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333W (Tc)
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Operating Temperature
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-55anddeg;C ~ 175anddeg;C (TJ)
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Grade
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-
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Qualification
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-
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Mounting Type
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Through Hole
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Supplier Device Package
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TO-220AB
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Package / Case
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Base Product Number
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Drawing
Our advantage :
- High quality products --- our offers are 100% new and original, ROHS
- Competitive price --- good Purchase channels with good price.
- Professional service --- strict quality testing before the shipment, and perfect after-sales service after the purchase.
- Adequate inventory --- With the support of our strong Purchasing team,
- Fast delivery --- we will ship the goods within 1-3 working days after the payment confirmed.
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be sure to meet your need for all kinds of components. ^_^
Product List
Supply a Series of Electronic Components, full range of semiconductors, active andamp; passive Components.We can help you to get all for bom of the PCB,IN a word, you can get one-stop solution here,
The offers including:
Integrated Circuit, Memory ICs, Diode, Transistor , Capacitor, Resistor, Varistor, Fuse, Trimmer andamp; Potentiometer, Transformer, Battery, Cable, Relay, Switch, Connector, Terminal Block, Crystal andamp; Oscillator, Inductor, Sensor, Transformer, IGBT Driver, LED,LCD, Convertor, PCB (Printed Circuit Board),PCBA (PCB Assembly)
Strong in Brand:
Microchip, MAX, AD, TI, ATMEL, ST, ON, NS, Intersil, Winbond, Vishay, ISSI, Infineon, NEC, FAIRCHILD, OMRON,YAGEO, TDK, etc
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