Ultra-Low Rds(on) 0.02Ω IRF4905PBF P-Channel -55A -60V TO-220 Package High Current Robust Avalanche Rated Logic Level Gate Low Gate Charge 110nC Fast Switching High Power Efficiency
| Attribute | Value |
|---|---|
| Function | Step-Up, Step-Down |
| Output Configuration | Positive or Negative |
| Topology | Buck, Boost |
| Output Type | Adjustable |
| Number of Outputs | 1 |
Ultra-Low Rds(on) 0.02 Ω IRF4905PBF P-Channel -55A -60V TO-220 Package High Current Robust Avalanche Rated Logic Level Gate Low Gate Charge 110nC Fast Switching High Power Efficiency
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- P-Channel
- Fully Avalanche Rated
- Lead-Free
- Power Switching: Often used in power distribution systems such as motherboards, servers, and communication equipment as a high-side switch to control the power on/off of other circuits. It offers high efficiency and low voltage drop.
- Motor Drive and Control: Suitable for driving high-power DC motors, such as those in robotics, industrial automation equipment, and power tools. It is commonly used in H-bridge configurations for forward/reverse rotation and speed regulation.
- DC-DC Converters (Buck/Boost): In synchronous rectifier-based power conversion circuits, it can serve as a high-side switch. It is particularly suitable for applications with low input voltage (andlt;60V) but high current requirements, significantly reducing conduction losses and improving overall efficiency.
- Battery Protection and Management: As a P-MOS, it is inherently suitable for load switching in battery-powered devices. It is commonly used in lithium battery protection circuits and BMS (Battery Management Systems) to manage charge and discharge paths. Its low resistance helps reduce heat generation and extend battery life.
- Inverters and UPS (Uninterruptible Power Supplies): Used for power switching and freewheeling in small to medium-power inverter bridges and backup power systems.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO 220 contribute to its wide acceptance throughout the industry.
| Category | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|---|---|
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 74A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 38A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRF4905 |
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