IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mΩ TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications
IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mandOmega; TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications
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Features
Integrated Half-Bridge Package
Reduces the Part Count by Half
Facilitates Better PCB Layout
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDS(ON) for Improved Efficiency
Low Qg and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier
Lead-Free Package
Halogen-Free
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Applications
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Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.
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INFORMATION
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Category
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Manufacturer
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Infineon Technologies
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Series
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-
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Packaging
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Tube
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Part Status
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Obsolete
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Technology
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MOSFET (Metal Oxide)
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Configuration
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2 N-Channel (Dual)
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FET Feature
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-
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Drain to Source Voltage (Vdss)
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150V
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Current - Continuous Drain (Id) @ 25anddeg;C
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8.7A
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Rds On (Max) @ Id, Vgs
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95mOhm @ 5.2A, 10V
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Vgs(th) (Max) @ Id
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4.9V @ 50andmicro;A
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Gate Charge (Qg) (Max) @ Vgs
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20nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds
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810pF @ 25V
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Power - Max
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18W
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Operating Temperature
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-55anddeg;C ~ 150anddeg;C (TJ)
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Mounting Type
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Through Hole
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Package / Case
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TO-220-5 Full Pack, Formed Leads
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Supplier Device Package
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TO-220-5 Full-Pak
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Base Product Number
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Drawing
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