2SD1781KT146R 2A 160V NPN Transistor with High hFE 120-240 625mW Power Low Noise Built-in Diode SOT-89-3 Package Halogen-Free Tape and Reel Packaging
2SD1781KT146R 2A 160V NPN Transistor with High hFE 120-240 625mW Power Low Noise Built-in Diode SOT-89-3 Package Halogen-Free Tape andamp; Reel Packaging
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Features
1)Very low VCE(sat). VCE(sat)=0.1V(Typ.) (IC/IB=500mA/50mA)
2)Higt current capacity in compact package.
3)Complements the 2SB1197K.
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Applications
Power Supply Control Circuits
Audio Frequency Amplification
Driver Stages for Motors and Relays
Voltage Regulation and Line Drivers
General-Purpose Switching and Amplification
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Description
The 2SD1781KT146R is a high-voltage, medium-power NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Encapsulated in a compact SOT-89-3 surface-mount package, it offers a robust combination of voltage tolerance, current gain, and power handling capability.
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INFORMATION
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Category
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Mfr
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Series
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-
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Packaging
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Tape andamp; Reel (TR)
Cut Tape (CT)
Digi-Reelandreg;
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Part Status
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Active
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Transistor Type
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Current - Collector (Ic) (Max)
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800 mA
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Voltage - Collector Emitter Breakdown (Max)
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32 V
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Vce Saturation (Max) @ Ib, Ic
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400mV @ 50mA, 500mA
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Current - Collector Cutoff (Max)
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500nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce
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180 @ 100mA, 3V
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Power - Max
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200 mW
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Frequency - Transition
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150MHz
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Operating Temperature
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150anddeg;C (TJ)
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Mounting Type
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Surface Mount
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Package / Case
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TO-236-3, SC-59, SOT-23-3
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Supplier Device Package
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SMT3
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Base Product Number
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Drawing
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- Fast delivery --- we will ship the goods within 1-3 working days after the payment confirmed.
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