SKM75GB128DN 1200V, 75A Dual IGBT Module Low VCE(sat) 1.9V Fast Switching Integrated Diode 10μs SC Capability SEMITOP2 Package Press-Fit Pins UL Certified for Drives and Inverters
SKM75GB128DN 1200V, 75A Dual IGBT Module Low VCE(sat) 1.9V Fast Switching Integrated Diode 10μs SC Capability SEMITOP2 Package Press-Fit Pins UL Certified for Drives and Inverters
Features
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1200V collector-emitter voltage (V CES) with 75A continuous collector current
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Low saturation voltage (VCE(sat)) for reduced conduction losses
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Fast switching capability with low turn-on and turn-off losses: Eon 5.7mJ, Eoff 4.7mJ (typ)
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CAL diode technology with fast reverse recovery time (~200ns) for efficient rectification
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10μs short-circuit withstand capability at 150°C for enhanced robustness
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SEMITRANS™ 2N isolated package with high thermal conductivity ceramic substrate
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UL recognized for industrial safety standards
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Wide operating temperature range: -40°C to +150°C
Applications
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AC motor drives and industrial inverters
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Uninterruptible Power Supplies (UPS)
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High-frequency switching power supplies and converters
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Welding equipment and induction heating systems
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Solar inverters and renewable energy systems
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Industrial automation and servo drives
Description
The SKM75GB128DN is a 1200V, 75A dual IGBT power module from SEMIKRON, part of the SEMITRANS™ 2N series with SPT (Soft Punch Through) IGBT technology . It integrates two IGBTs with reverse-connected CAL (Controlled Axial Lifetime) diodes in a compact, isolated package designed for high-frequency switching applications up to 40kHz . The module features a high copper direct-bonded ceramic substrate for excellent thermal performance and is UL recognized
INFORMATION
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