40 mil 1watts High Power IR Peak Emission Wavelength 850nm / 940nm LED Components
This is 40mil Chip 1w High Power ir led diode Peak Emission Wavelength 850nm/940nm
Features:
- High reliability.
- High radiant intensity.
- Low forward voltage.
- Peak wavelength λp=850nm.
- The product itself will remain within RoHS compliant version.
Descriptions:
- The DL-HP10SIRA-1SIR120 Infrared Emitting Diode is a high intensity diode.
- The device is spectrally matched with phototransistor, photodiode and infrared receiver module.
Applications:
- Free air transmission system.
- Optoelectronic switch.
- Floppy disk drive.
- Infrared applied system.
- Smoke detector.
Our Services
1. We have our own independent R&D department on existing products for better maintenance, we still continue to develop high-tech products. We have our own patented products.
2. Our products must pass strict quality control procedures.
3. We have advanced production equipment.
4. We use the raw materials are from domestic and foreign well-known brand manufacturers.
5. After repeated tests before shipment.
Advantages
1. Long life: product life of up to 50,000 hours;
2. Nanosecond response time, brightness and color make it easy to dynamically control: enables dynamic color changes and digital control;
3. A large design space: the organic architecture can be realized with the integration to only see the effect of light not seen light;
4. Environmental protection: no toxic metals mercury, no infrared and ultraviolet radiation;
5. Color: different wavelengths produce different colored light, bright saturated, no filter, can control red, green and blue primary colors to form a variety of colors, can realize full-color gradients, and other color effects.
Absolute Maximum Ratings at Ta=25℃
| Parameters | Symbol | Max. | Unit |
| Power Dissipation | PD | 1000 | mW |
|
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width) |
IFP | 1.00 | A |
| Forward Current | IF | 350 | mA |
| Reverse Voltage | VR | 5 | V |
| Operating Temperature Range | Topr | -10℃ to +70℃ | |
| Storage Temperature Range | Tstg | -20℃ to +80℃ | |
| Soldering Temperature | Tsld | 260℃ for 5 Seconds | |
Electrical Optical Characteristics at Ta=25℃
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Radiant Intensity | Ie | 110 | 180 | --- | mW/Sr | IF=350mA |
| Viewing Angle * | 2θ1/2 | --- | 120 | --- | Deg | (Note 1) |
| Peak Emission Wavelength | λp | --- | 850 | --- | nm | IF=350mA |
| Spectral Bandwidth | △λ | --- | 45 | --- | nm | IF=350mA |
| Forward Voltage | VF | 1.30 | 1.50 | 1.80 | V | IF=350mA |
| Reverse Current | IR | --- | --- | 50 | µA | VR=5V |
Notes:
1. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intens
High Power Infrared LED Package Dimension:
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