DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
                                                                                                           
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3mm Round Standard T-1 infrared light emitting diode Radiant Intensity 15mM/sr Peak Emission Wavelength 880nm

Price Negotiable
Price: Negotiable
MOQ: 10,000pcs
Delivery Time: 5-7 working days after received your payment
Brand: Double Light
Product Description

3mm Round Standard T-1 infrared light emitting diode Radiant Intensity 15mM/sr Peak Emission Wavelength 880nm

 

5mm Infrared Emitting Diode 880nm 

  • Features:
    • High radiant intensity
    • Peak wavelength p=940nm
    • Viewing angle: 20°, Top view, through hold, radial
    • High reliability
    • 2.54mm lead spacing
  • Description:
    • Infrared Emitting Diode (IR333C-A) is a high intensity diode, molded, water clear plastic package
    • The device is spectrally matched with phototransistor, photodiode and infrared receiver module
  • Applications:
    • Free air transmission system
    • Optoelectronic switch
    • Floppy disk drive
    • Infrared applied system
    • Smoke detector

Primary Competitive Advantages:
Country of Origin
Green Product
Guarantee/Warranty
International Approvals
Packaging
Price
Prompt Delivery
Quality Approvals
Small Orders Accepted

 

  1. Absolute Maximum Ratings at Ta=25℃
Parameters Symbol Max. Unit
Power Dissipation PD 100 mW

Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)

IFP 1.00 A
Forward Current IF 50 mA
Reverse Voltage VR 5 V
Operating Temperature Range Topr -40℃ to +80℃
Storage Temperature Range Tstg -40℃ to +85℃
Soldering Temperature Tsld 260℃ for 5 Seconds
 

 
Electrical Optical Characteristics at Ta=25℃

Parameters Symbol Min. Typ. Max. Unit Test Condition
Radiant Intensity (Note 1) * Ee 20.0 25.0 --- mW/sr IF=20mA
--- 50.0 --- IF=50mA, tp=100µs, tp/T=0.01
Viewing Angle (Note 2) * 2θ1/2 --- 45 --- Deg IF=20mA
Peak Emission Wavelength λp --- 940 --- nm IF=20mA (Note 3)
Spectral Bandwidth △λ --- 50 --- nm IF=20mA
Forward Voltage VF 0.80 1.20 1.50 V IF=20mA
--- 1.50 1.60 IF=50mA, tp=100µs, tp/T=0.01
Reverse Current IR --- --- 10 µA VR=5V
 
 
Infrared Emitting Diode Package Dimension:

 

 
 

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Company DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
Location Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033
Contact Person Chen

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