DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
                                                                                                           
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Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor LED

Price Negotiable
Price: Negotiable
MOQ: 10,000pcs
Delivery Time: 5-7 working days after received your payment
Brand: Double Light
Product Description

LED Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor

 

5mm LED Phototransistor

  1. Features:
  1. 5mm round standard t-1 3/4 package.
  2. Fast response time.
  3. High photo sensitivity.
  4. Small junction capacitance.
  5. The product itself will remain within RoHS compliant Version.

 

  1. Descriptions:
  1. The 583PTD is a high speed and high sensitive silicon NPN phototransistor in a standard Φ5 package.
  2. Due to its black epoxy, the device is matched to visible light and infrared radiation.

 

  1. Applications:
  1. Infrared applied system.
  2. Optoelectronic automatic control system.
  3. Optoelectronic switch.
  4. Camera.
  5. Printer.
  6. Counters and sorters.
  7. Encoders.
  8. Floppy disk drive.
  9. Video camera, tape and card readers.
  10. Position sensors.

 

 

  1. Absolute Maximum Ratings at Ta=25℃
Parameters Symbol Rating Unit
Power Dissipation PD 75 mW
Collector-Emitter Voltage VCEO 30 V
Emitter-Collector-Voltage VECO 5 V
Collector Current IC 20 mA
Operating Temperature TOPR -40 to +85
Storage Temperature TSTG -40 to +100
Lead Soldering Temperature TSOL 260℃
 

Electrical Optical Characteristics at Ta=25℃

Parameters Symbol Min. Typ. Max. Unit Condition
Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

IC=100μA,

Ee=0mW/cm²

Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

IE=100μA,

Ee=0mW/cm²

Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

IC=0.70mA,

Ee=1mW/cm2

Collector Dark Current ICEO --- --- 100 nA

Ee=0mW/cm²,

VCE=20V

On-State Collector Current IC(ON) 0.70 2.00 --- mA

Ee=1mW/cm²,

VCE=5V

Optical Rise Time (10% to 90%) TR --- 15 --- μs

VCE=5V,

IC=1mA,

RL=1000Ω

Optical Fall Time (90% to 10%) TF --- 15 ---
Reception Angle 1/2 --- 10 --- Deg  
Wavelength Of Peak Sensitivity λP --- 940 --- nm  
Rang Of Spectral Bandwidth λ0.5 700 --- 1200 nm  
 

 

Infrared Emitting Diode Package Dimension:

 

 
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Company DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
Location Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033
Contact Person Chen

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