3Mm 940nm IR Receiver LED Infrared light , Clear Round DC 3V Infrared applied system.
3Mm 940nm IR Receiver LED Infrared light , Clear Round DC 3V Infrared applied system
Features:
- Fast response time.
- Outline Package:3.2x1.6x2.33mm
- High photo sensitivity.
- Small junction capacitance.
- Package in 8mm tape on 7” diameter reel.
- The product itself will remain within RoHS compliant Version.
Descriptions:
- The 1206 SMD LED is a high speed and high sensitive silicon NPN phototransistor in miniature SMD package which is molded in a black epoxy with flat top view lens.
- Due to its black epoxy, the device is spectrally matched to visible and infrared emitting diode.
Applications:
- Automatic door sensor.
- Infrared applied system.
- Counters and sorters.
- Encoders.
- Floppy disk drive.
- Optoelectronic switch.
- Video camera, tape and card readers.
- Position sensors.
- Copier.
- Game machine.
- Applicable to all kinds of mechanical keyboard launch requirements
- Suitable for all kinds of infrared transmitting and receiving equipment
- Infrared remote control transmitter is suitable for all kinds of electronic products
- Applicable to all kinds of small household electrical appliance products for reflection application
| Part No. | Chip Material | Lens Color | Source Color |
| DL-R1206PD-1PD120 | Silicon | Black | Phototransistor |
Absolute Maximum Ratings (Ta=25℃)
| Parameters | Symbol | Rating | Unit |
|
Power Dissipation At (or below) 25℃ free Air Temperature |
PD | 100 | mW |
| Collector-Emitter Voltage | VCEO | 30 | V |
| Emitter-Collector-Voltage | VECO | 5 | V |
| Collector Current | IC | 20 | mA |
| Operating Temperature | Topr | -40 to +80 | ℃ |
| Storage Temperature | Tstg | -40 to +85 | ℃ |
| Soldering Temperature | Tsol | 260℃ for 5 Seconds | |
Electrical Optical Characteristics at Ta=25℃
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Condition |
| Collector-Emitter Breakdown Voltage | BVCEO | 30 | --- | --- | V |
IC=100μA, Ee=0mW/cm² |
| Emitter-Collector Breakdown Voltage | BVECO | 5 | --- | --- | V |
IE=100μA, Ee=0mW/cm² |
| Collector-Emitter Saturation Voltage | VCE(SAT) | --- | --- | 0.40 | V |
IC=2mA, Ee=1mW/cm² |
| Collector Dark Current | ICEO | --- | --- | 100 | nA |
VCE=20V, Ee=0mW/cm² |
| On State Collector Current | IC(ON) | 0.10 | 0.50 | --- | mA |
VCE=5V, Ee=1mW/cm² |
| Optical Rise Time (10% to 90%) | TR | --- | 15 | --- | μs |
VCE=5V, IC=1mA, RL=1000Ω |
| Optical Fall Time (90% to 10%) | TF | --- | 15 | --- | ||
| Reception Angle | 2θ1/2 | --- | 30 | --- | Deg | |
| Wavelength Of Peak Sensitivity | λP | --- | 940 | --- | nm | |
| Rang Of Spectral Bandwidth | λ0.5 | 700 | --- | 1200 | nm |
*1: Pulse Width=100μs, Duty Cycle=1%.
*2: For 10 Seconds.
*3: AC For 1 minute, R.H.=40%~60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
Electrical Optical Characteristics (Ta=25℃)
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Test condition | |
| Input | Forward Voltage | VF | --- | 1.20 | 1.50 | V | IF=20mA |
| Reverse Current | IR | --- | --- | 10 | µA | VR=4V | |
| Terminal Capacitance | Ct | --- | 30 | 250 | pF | V=0V, f=1KHz | |
| Output | Collector Dark Current | ICEO | --- | --- | 100 | nA |
Vce=20V, IF=0 mA |
| Collector-Emitter Breakdown Voltage | VCEO | 35 | --- | --- | V |
IC=0.1mA, IF=0mA |
|
|
Emitter –Collector Breakdown Voltage |
VECO | 6 | --- | --- | V |
IE=10uA, IF=0mA |
|
| Transfer Characteristics | Collector Current | IC | 2.50 | --- | 30 | mA |
VCE=5V, IF=5mA |
| Current Transfer Ratio * | CTR | 50 | --- | 600 | % | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | --- | 0.10 | 0.20 | V |
IF=20mA Ic=1mA |
|
| Isolation Resistance | RISO | 5x1010 | 5x1011 | --- | Ω | DC 500V 40%~60% R.H. | |
| Floating Capacitance | Cf | --- | 0.6 | 1 | pF | V=0V, f=1MHz | |
| Cut-Off Frequency | fc | --- | 80 | --- | kHz |
VCE =5V Ic=2mA RL=100 Ω -3dB |
|
|
Rise Time (10% to 90%) |
TR | --- | 4 | 18 | μs |
VCE=2V, IC=2mA, RL=100Ω |
|
|
Fall Time (90% to 10%) |
TF | --- | 3 | 18 | |||
* CRT=IC / IF × 100%.
Rank Table Of Current Transfer Ratio (CTR)
| Rank Mark | Min. (%) | Max. (%) |
| L | 50 | 100 |
| A | 80 | 160 |
| B | 130 | 260 |
| C | 200 | 400 |
| D | 300 | 600 |
| L or A or B or C or D | 50 | 600 |
Notes:
1. The ray receiving surface at a vertex and relation to the ray axis in the range of θ=0° and θ=45°.
2. A range from 30cm to the arrival distance. Average value of 50 pulses
Package Dimension:
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