1.10Mm Height 0805 Package Infrared Emitting Diode , Infrared Chip LED
This is 1.10mm Height 0805 Package Infrared Chip LED, its lens color is water Clear.
| Part No. | Chip Material | Lens Color | Source Color |
| DL-PCB0805SIRC-1SIR120 | GaAlAs | Water Clear | Infrared |
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25mm (0.01”) unless otherwise specified.
3. Lead spacing is measured where the leads emerge from the package.
4. Specifications are subject to change without notice.
Features:
- Package in 8mm tape on 7" diameter reel.
- Compatible with automatic placement equipment.
- Compatible with infrared and vapor phase reflow solder process.
- Mono-color type.
- The product itself will remain within RoHS compliant Version.
Descriptions:
- The PCB1206SIR is an infrared emitting diode in miniature SMD package which is molded in a water clear plastic with flat top view lens.
- The device is spectrally matched with photodiode and phototransistor.
Applications:
- PCB mounted infrared sensor.
- Infrared emitting for miniature light barrier.
- Floppy disk drive.
- Optoelectronic switch.
- Smoke detector.
Absolute Maximum Ratings at Ta=25℃
| Parameters | Symbol | Max. | Unit |
| Power Dissipation | PD | 100 | mW |
|
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width) |
IFP | 1.00 | A |
| Forward Current | IF | 50 | mA |
| Reverse Voltage | VR | 5 | V |
| Operating Temperature Range | Topr | -25℃ to +80℃ | |
| Storage Temperature Range | Tstg | -40℃ to +85℃ | |
| Lead Soldering Temperature | Tsld | 260℃ for 5 Seconds | |
Electrical Optical Characteristics at Ta=25℃
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Radiant Intensity * | Ee | 1.00 | 1.60 | --- | mW/sr | IF=20mA |
| --- | 3.00 | --- |
IF=100mA (Pulse Width≤100µs, Duty≤1%) |
|||
| Viewing Angle * | 2θ 1/2 | --- | 140 | --- | Deg | IF=20mA (Note 2) |
| Peak Emission Wavelength | λp | --- | 850 | --- | nm | IF=20mA (Note 3) |
| Spectral Bandwidth | △λ | --- | 45 | --- | nm | IF=20mA |
| Forward Voltage | VF | 1.00 | 1.45 | 1.65 | V | IF=20mA |
| --- | 1.60 | 1.85 |
IF=100mA (Pulse Width≤100µs, Duty≤1%) |
|||
| Reverse Current | IR | --- | --- | 10 | µA | VR=5V |
Notes:
1. Luminous (Radiant) Intensity Measurement allowance is ± 10%.
2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
3. The dominant wavelength (λp) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.
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