DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
                                                                                                           
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High Power IR Led Infrared Emitting Diode 5000mw/sr High Radiant Intensity

Price Negotiable
Price: US$ 78-80. per unit (Pieces)
MOQ: 50pcs
Delivery Time: 15 working days after payment received
Brand: DOUBLE LIGHT
Product Description

Datasheet:DL-COB5252SIRC-200W.pdf                            IR:850NM   200W

                     DL-COB5252SIRC-150W.pdf                            IR:850NM   150W

                     DL-COB5640SIRC-96W.pdf                              IR:850NM    96W

                    For high power IR LED with 730nm, please contact us.

 

 

200W High Power Infrared LED COB LED

 

Features:

  1. Long operating life
  2. Highest flux
  3. More energy efficient than incandescent and most halogen lamps
  4. Low voltage DC operated
  5. Instant light (less than 100ns)
  6. Fully dimmable
  7. No UV
  8. Superior ESD protection
  9. RoHS compliant

 

Applications:

  1. Commercial lighting
  2. Advertisement
  3. Architectural lighting
  4. Street lamp

 

Absolute Maximum Ratings at Ta=25℃

Parameters Symbol Rating Units
Power Dissipation PD 200 W

Peak Emission Wavelength

λp

850 nm

Forward Current

IF 7000 mA
Reverse Voltage VR 5 V
Operating Temperature Range Topr -40 to +85
Storage Temperature Range Tstg -40 to +100
Soldering Temperature Tsol 350±℃ for 3 Seconds  
 

Notes:

1. It is strongly recommended that the temperature of lead be not higher than 55℃.

2. Proper current derating must be observed to maintain junction temperature below the maximum.

3. LEDs are not designed to be driven in reserve bias.

  • Electrical Optical Characteristics at Ta=25℃
Parameters Symbol Min. Typ. Max. Unit Test Condition

Radiant Intensity[1]

Ee

1500 5000 ---

mW/sr

IF=7000mA
Viewing Angle [2] 1/2 --- 120 --- Deg IF=7000mA
Peak Emission Wavelength[3] λp --- 850 --- nm IF=7000mA
Spectral Bandwidth △λ --- 50 --- nm IF=7000mA
Forward Voltage VF 20.0 --- 24 V IF=7000mA
Reverse Current IR --- --- 10 µA VR=50V
 

Notes:

1. Luminous Intensity Measurement allowance is ± 10%.

2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

3. The dominant wavelength (λd) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

 

 Dimension:

For more details, please contact us.
Email: Facebook@doublelight.com.cn

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Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
Location Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033
Contact Person Chen

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