2 PIN SMD Infrared Light Sensor High Sensitive Silicon NPN Phototransistor 0.8mm Height
Price:
Negotiable
MOQ:
10,000pcs
Delivery Time:
5-7 working days after received your payment
Brand:
Double Light
Product Description
0.8mm Height 0603 Package 2 PIN SMD Phototransistor Infrared Light Sensor high sensitive silicon NPN phototransistor
- Features:
- Fast response time.
- High photo sensitivity.
- Small junction capacitance.
- Package in 8mm tape on 7” diameter reel.
- The product itself will remain within RoHS compliant Version.
- Descriptions:
- The 0603 is a high speed and high sensitive silicon NPN phototransistor in miniature SMD package which is molded in a water clear epoxy with flat top view lens.
- Due to its water clear epoxy, the device is spectrally matched to visible and infrared emitting diode.
- Applications:
- Automatic door sensor.
- Infrared applied system.
- Counters and sorters.
- Encoders.
- Floppy disk drive.
- Optoelectronic switch.
- Video camera, tape and card readers.
- Position sensors.
- Copier.
- Game machine.
| Part No. | Chip Material | Lens Color | Source Color |
| DL-PCB00603PTC-1PT120 | Silicon | Water Clear | Phototransistor |
Notes:
- All dimensions are in millimeters (inches).
- Tolerance is ± 0.10mm (.004″) unless otherwise specified.
- Specifications are subject to change without notice.
Absolute Maximum Ratings at Ta=25℃
| Parameters | Symbol | Rating | Unit |
|
Power Dissipation At (or below) 25℃ free Air Temperature |
PD | 100 | mW |
| Collector-Emitter Voltage | VCEO | 50 | V |
| Emitter-Collector-Voltage | VECO | 5 | V |
| Collector Current | IC | 20 | mA |
| Operating Temperature | Topr | -25 to +80 | ℃ |
| Storage Temperature | Tstg | -30 to +85 | ℃ |
| Soldering Temperature | Tsol | 260℃ for 5 Seconds | |
Electrical Optical Characteristics at Ta=25℃
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Condition |
| Collector-Emitter Breakdown Voltage | BVCEO | 30 | --- | --- | V |
IC=100μA, Ee=0mW/cm² |
| Emitter-Collector Breakdown Voltage | BVECO | 5 | --- | --- | V |
IE=100μA, Ee=0mW/cm² |
| Collector-Emitter Saturation Voltage | VCE(SAT) | --- | --- | 0.40 | V |
IC=2mA, Ee=1mW/cm² |
| Collector Dark Current | ICEO | --- | --- | 100 | nA |
VCE=20V, Ee=0mW/cm² |
| On State Collector Current | IC(ON) | 0.67 | 1.50 | --- | mA |
VCE=5V, Ee=1mW/cm² |
| Optical Rise Time (10% to 90%) | TR | --- | 15 | --- | μs |
VCE=5V, IC=1mA, RL=1000Ω |
| Optical Fall Time (90% to 10%) | TF | --- | 15 | --- | ||
| Reception Angle | 2θ1/2 | --- | 120 | --- | Deg | |
| Wavelength Of Peak Sensitivity | λP | --- | 940 | --- | nm | |
| Rang Of Spectral Bandwidth | λ0.5 | 400 | --- | 1100 | nm |
- Typical Electrical / Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Company introduction:
HongKong Double Light Electronics was founded in 2005 as a professional LED manufacturer located in Shenzhen, China.
HongKong Double Light Electronics was founded in 2005 as a professional LED manufacturer located in Shenzhen, China.
We mainly produce a wide range of products with automatic production lines, which include IR led, infrared led, 0603 IR led, smd IR LED, THT LEDs, chip LEDs, LED displays, infrared LEDs, dot matrix, LCD backlights and LED lighting fixtures.
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Company
DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
Location
Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033
Contact Person
Chen