DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
                                                                                                           
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940nm Phototransistor Infrared Emitting Diode Water Clear Emitter Emission

Price Negotiable
Price: US$ 0.01-0.1per unit (Pieces)
MOQ: 1000 PCS
Delivery Time: 5-7 working days after received your payment
Brand: Double Light
Product Description

LED 940nm Phototransistor High photo sensitivity Water Clear Emitter Emission

 

 

Features:

 

  • Fast response time l
  • High photo sensitivity l
  • Small junction capacitance
  • Pb free l
  • The product itself will remain with in RoHS compliant version.

 

Descriptions:

 

  • The PTC730C-B is a photo transistor in miniature package which is molded in a water clear plastic with spherical top view lens.The device is spectrally to infrared emitting diode.

 

Applications:

 

  • Automatic door sensor.
  • Infrared applied system.
  • Counters and sorters.
  • Encoders.
  • Optoelectronic switch.
  • Video camera, tape and card readers.
  • Position sensors.
  • Copier.
  • Game machine.
  • Optical counters
  • Optical detectors
  • Flywheel counters

 

Rankings

 

Parameter Symbol Min Max Unit Test condition
7-3 Ic(on) 0.53 1.19 mA

VCE=5V

Ee=0.555mW/cm2

7-2 0.88 1.70
7-1 1.24 2.21
6-2 1.59 2.98
6-1 1.77 3.41

 

Package Dimension

 

 

 

Part No. Chip Material Lens Color Source Color
DL-PT9087C Silicon Water Clear Phototransistor

 

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ± 0.25mm (0.01″) unless otherwise specified.

3. Specifications are subject to change without notice.

 

Absolute Maximum Ratings (Ta=25℃)

 

Parameter Symbol Ratings Unit
Collector-Emitter Voltage VCEO 30 V
Emitter-Collector Voltage VECO 5 V
Collector Power Dissipation PD 75 mW
Collector Current IC 40 mA
Operating Temperature Topr -25 ~ +65 °C
Storage Temperature Tstg -40 ~ +85 °C
Soldering Temperature *2 Tsol 260 °C

 

Electrical Optical Characteristics at Ta=25℃

 

Parameters Symbol Min. Typ. Max. Unit Condition
Collector-Emitter Breakdown Voltage BVCEO 30 --- --- V

IC=100μA,

Ee=0mW/cm²

Emitter-Collector Breakdown Voltage BVECO 5 --- --- V

IE=100μA,

Ee=0mW/cm²

Collector-Emitter Saturation Voltage VCE(SAT) --- --- 0.40 V

IC=0.70mA,

Ee=1mW/cm2

Collector Dark Current ICEO --- --- 100 nA

Ee=0mW/cm²,

VCE=20V

On-State Collector Current IC(ON) 0.53 ---- 3.41 mA

VCE=5V

Ee=0.555mW/cm2

Optical Rise Time (10% to 90%) TR --- 15 --- μs

VCE=5V,

IC=1mA,

RL=1000Ω

Optical Fall Time (90% to 10%) TF --- 15 ---
Reception Angle 1/2 --- 30 --- Deg  
Wavelength Of Peak Sensitivity λP --- 940 --- nm  
Rang Of Spectral Bandwidth λ0.5 400 --- 1200 nm  
 

 

*2. At the position of 2mm from the bottom face of resin package within 5 second.

 

Typical Electrical / Optical Characteristics Curves

 

(25℃ Ambient Temperature Unless Otherwise Noted)

 

Get in Touch

Have questions about our products or want to discuss a custom order? Our team is ready to help you.

Company DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
Location Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033
Contact Person Chen

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