DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
                                                                                                           
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Since 2005
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GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

Price Negotiable
Price: Negotiated
MOQ: 10,000pcs
Delivery Time: 5-7 working days after received your payment
Brand: Double Light
Product Description

                                  850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode

 

                                                                   

Features:

  • High reliability.
  • High radiant intensity.
  • Low forward voltage.
  • Peak wavelength λp=850nm.
  • The product itself will remain within RoHS compliant version.

Descriptions:

  • The DL-HP10SIR Infrared Emitting Diode is a high intensity diode.
  • The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

Applications:

  • Free air transmission system.
  • Optoelectronic switch.
  • Floppy disk drive.
  • Infrared applied system.
  • Smoke detector.

Part No. Chip Material Lens Color Source Color
DL-HP10SIRA-1SIR120 GaAlAs Water Clear Infrared

 

Notes:

  • All dimensions are in millimeters.
  • Tolerance is ± 0.25 mm (.010″) unless otherwise specified.
  • Specifications are subject to change without notice.

 

Absolute Maximum Ratings at Ta=25℃

Parameters Symbol Max. Unit
Power Dissipation PD 1000 mW
Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)
IFP 1.00 A
Forward Current IF 350 mA
Reverse Voltage VR 5 V
Operating Temperature Range Topr -10℃ to +70℃
Storage Temperature Range Tstg -20℃ to +80℃
Soldering Temperature Tsol 260℃ for 5 Seconds
 

 

Electrical Optical Characteristics at Ta=25℃

Parameters Symbol Min. Typ. Max. Unit Test Condition
Radiant Intensity Ie 110 180 ---- mW/Sr IF=350mA
Viewing Angle * 2θ1/2 ---- 120 ---- Deg (Note 1)
Peak Emission Wavelength λp ---- 850 ---- nm IF=350mA
Spectral Bandwidth △λ ---- 45 ---- nm IF=350mA
Forward Voltage VF 1.30 1.50 1.80 V IF =350mA
Reverse Current IR ---- ---- 50 µA V R =5V
 

Notes:

  • θ 1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

 

 
 
 
 
 
 

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Company DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
Location Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033
Contact Person Chen

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