80mW Infrared Emitting Diode Round T-1 3mm infrared led 940nm for explain light emitting diode
Price:
usd 0.03/pcs
MOQ:
10,000pcs
Delivery Time:
5-7 working days after received your payment
Brand:
Double Light
Product Description
80mW Infrared Emitting Diode Round T-1 3mm infrared led 940nm for explain light emitting diode
infrared light emitting diodefeatures:
- Standard T-1 diameter package.
- Low forward voltage.
- Viewing angle=45°.
- Reliable and rugged.
- The product itself will remain within RoHS complaint Version.
light emitted diode descriptions:
- The device is spectrally matched with silicon photodiode and phototransistor.
940nm infrared led applications:
- Floppy disk drive.
- Optoelectronic switch.
- Camera.
- Free air transmission system.
- Video.
Package Dimension:
| Part No. | Chip Material | Lens Color | Source Color |
| DL-304IRCA-2IR45 | GaAlAs | Water Clear | Infrared |
Notes:
- All dimensions are in millimeters (inches).
- Tolerance is ± 0.25 mm (.010″) unless otherwise specified.
- Protruded resin under flange is 1.00 mm (.039″) max.
- Specifications are subject to change without notice.
Absolute Maximum Ratings at Ta=25℃
| Parameters | Symbol | Max. | Unit |
| Power Dissipation | PD | 100 | mW |
|
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width) |
IFP | 1.00 | A |
| Forward Current | IF | 100 | mA |
| Reverse Voltage | VR | 5 | V |
| Operating Temperature Range | Topr | -40℃ to +80℃ | |
| Storage Temperature Range | Tstg | -40℃ to +85℃ | |
| Soldering Temperature | Tsld | 260℃ for 5 Seconds | |
Electrical Optical Characteristics at Ta=25℃
| Parameters | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Radiant Intensity (Note 1) * | Ee | 4.0 | 8.0 | --- | mW/sr | IF=20mA |
| --- | 20.0 | --- | IF=100mA, tp=100µs, tp/T=0.01 | |||
| Viewing Angle (Note 2) * | 2θ1/2 | --- | 45 | --- | Deg | IF=20mA |
| Peak Emission Wavelength | λp | --- | 940 | --- | nm | IF=20mA (Note 3) |
| Spectral Bandwidth | △λ | --- | 50 | --- | nm | IF=20mA |
| Forward Voltage | VF | 0.80 | 1.20 | 1.50 | V | IF=20mA |
| --- | 1.60 | 1.80 | IF=100mA, tp=100µs, tp/T=0.01 | |||
| Reverse Current | IR | --- | --- | 10 | µA | VR=5V |
Notes:
- Luminous (Radiant) Intensity Measurement allowance is ± 10%.
- θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
- The dominant wavelength (λp) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.
Why choose DOUBLE LIGHT?
1. Well-known chip material
2. 99.99% gold wire bonding
3. 3 years warranty
4. Over 10 years work experience technical service team
5. 24 hours service Professional sales team
6. Free Sample is available
7. Fast delivery
8.100% QC inspection Before Shippment
9. Aiming at the consult of "high quality, zero defect”, give you the best quality, best service.
1. Well-known chip material
2. 99.99% gold wire bonding
3. 3 years warranty
4. Over 10 years work experience technical service team
5. 24 hours service Professional sales team
6. Free Sample is available
7. Fast delivery
8.100% QC inspection Before Shippment
9. Aiming at the consult of "high quality, zero defect”, give you the best quality, best service.
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Get in Touch
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Company
DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD
Location
Room 2711, Huishang Center, Jiahui New City, No. 3027 Shennan Middle Road, Futian District, Shenzhen City, Guangdong Province China 518033
Contact Person
Chen